SQD45P03-12_GE3 Tech Spezifikatioune
Vishay Siliconix - SQD45P03-12_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQD45P03-12_GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-252AA | |
Serie | Automotive, AEC-Q101, TrenchFET® | |
Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V | |
Power Dissipation (Max) | 71W (Tc) | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3495 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | |
Basis Produktnummer | SQD45 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQD45P03-12_GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SQD45P03-12_GE3 | SQD45N05-20L-GE3 | SQD40P10-40L_GE3 | SQD40P10-40L_GE3 MOS |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Electro-Films (EFI) / Vishay |
Serie | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | Automotive, AEC-Q101, TrenchFET® | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Power Dissipation (Max) | 71W (Tc) | 2.5W (Ta), 75W (Tc) | 136W (Tc) | - |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50A (Tc) | 50A (Tc) | 38A (Tc) | - |
FET Typ | P-Channel | N-Channel | P-Channel | - |
Entworf fir Source Voltage (Vdss) | 30 V | 50 V | 100 V | - |
Input Capacitance (Ciss) (Max) @ Vds | 3495 pF @ 15 V | 1800 pF @ 25 V | 5540 pF @ 15 V | - |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
Basis Produktnummer | SQD45 | SQD45 | SQD40 | - |
Gate Charge (Qg) (Max) @ Vgs | 83 nC @ 10 V | 43 nC @ 10 V | 144 nC @ 10 V | - |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - |
Rds On (Max) @ Id, Vgs | 10mOhm @ 15A, 10V | 18mOhm @ 20A, 10V | 40mOhm @ 8.2A, 10V | - |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | ±20V | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Eroflueden SQD45P03-12_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQD45P03-12_GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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