SQD100N04-3M6L_GE3 Tech Spezifikatioune
Vishay Siliconix - SQD100N04-3M6L_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQD100N04-3M6L_GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-252AA | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 136W (Tc) | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
| Basis Produktnummer | SQD100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQD100N04-3M6L_GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SQD100N04-3M6L_GE3 | SQD15N06-42L_GE3 | SQD100N03-3M2L | SQD100A60 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | SANREX | |
| Basis Produktnummer | SQD100 | SQD15 | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 6700 pF @ 25 V | 535 pF @ 25 V | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 10 V | 15 nC @ 10 V | - | - |
| Vgs (th) (Max) @ Id | 3.5V @ 250µA | 2.5V @ 250µA | - | - |
| Supplier Device Package | TO-252AA | TO-252AA | - | - |
| FET Typ | N-Channel | N-Channel | - | - |
| Serie | - | TrenchFET® | - | - |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-3, DPak (2 Leads + Tab), SC-63 | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 15A (Tc) | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | - |
| FET Feature | - | - | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| Entworf fir Source Voltage (Vdss) | 40 V | 60 V | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | - | - |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 20A, 10V | 42mOhm @ 10A, 10V | - | - |
| Power Dissipation (Max) | 136W (Tc) | 37W (Tc) | - | - |
Eroflueden SQD100N04-3M6L_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQD100N04-3M6L_GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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