SQ4483BEEY-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQ4483BEEY-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQ4483BEEY-T1_GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | Automotive, AEC-Q101, TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 7W (Tc) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | |
| Basis Produktnummer | SQ4483 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQ4483BEEY-T1_GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SQ4483BEEY-T1_GE3 | SQ4431EY-T1_GE3 | SQ4470EY-TI-GE3 | SQ4431EY-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | VIS | Electro-Films (EFI) / Vishay |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | - | - |
| Gate Charge (Qg) (Max) @ Vgs | 113 nC @ 10 V | 25 nC @ 10 V | - | - |
| Mounting Type | Surface Mount | Surface Mount | - | - |
| Power Dissipation (Max) | 7W (Tc) | 6W (Tc) | - | - |
| Vgs (Max) | ±20V | ±20V | - | - |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | - | - |
| FET Typ | P-Channel | P-Channel | - | - |
| Basis Produktnummer | SQ4483 | SQ4431 | - | - |
| Rds On (Max) @ Id, Vgs | 8.5mOhm @ 10A, 10V | 30mOhm @ 6A, 10V | - | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - | - |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | - | - |
| Supplier Device Package | 8-SOIC | 8-SOIC | - | - |
| Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 10V | - | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | 10.8A (Tc) | - | - |
Eroflueden SQ4483BEEY-T1_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQ4483BEEY-T1_GE3 - Vishay Siliconix.
SQ4470EY-TI-GE3VISSQ4431EY-T1-GE3Electro-Films (EFI) / Vishay
SQ45323R3KSBABB Embedded PowerSQ4532102KLBABCSQ4532222KLBABCSQ4470EY-T1_BE3VishaySQ4483BEEY-T1-GE3Electro-Films (EFI) / VishaySQ4483EEY-T1-GE3Electro-Films (EFI) / VishaySQ4435EY-T1_GE3VishaySQ4532121KSBABCSQ4431EYVishaySQ4532101K3B-DE2ABCSQ4431EY-T1_GE3Vishay SiliconixMOSFET P-CH 30V 10.8A 8SOSQ4532151K2BABCSQ4470EY-T1-GE3Electro-Films (EFI) / VishaySQ4435EY-T1-GE3Electro-Films (EFI) / VishaySQ45321R0MLBABCSQ4532471JLBABC| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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