SQ2389ES-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQ2389ES-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQ2389ES-T1_GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Serie | Automotive, AEC-Q101, TrenchFET® | |
Rds On (Max) @ Id, Vgs | 94mOhm @ 10A, 10V | |
Power Dissipation (Max) | 3W (Tc) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Tc) | |
Basis Produktnummer | SQ2389 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQ2389ES-T1_GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SQ2389ES-T1_GE3 | SQ2362ES-T1_BE3 | SQ2362ES-T1_GE3 | SQ2364EES-T1_GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Power Dissipation (Max) | 3W (Tc) | 3W (Tc) | 3W (Tc) | 3W (Tc) |
Basis Produktnummer | SQ2389 | SQ2362 | SQ2362 | SQ2364 |
Rds On (Max) @ Id, Vgs | 94mOhm @ 10A, 10V | 68mOhm @ 2.4A, 10V | 95mOhm @ 4.5A, 10V | 240mOhm @ 2A, 4.5V |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V | 12 nC @ 10 V | 12 nC @ 10 V | 2.5 nC @ 4.5 V |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 20 V | 550 pF @ 30 V | 550 pF @ 30 V | 330 pF @ 25 V |
Entworf fir Source Voltage (Vdss) | 40 V | 60 V | 60 V | 60 V |
Serie | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.1A (Tc) | 4.3A (Tc) | 4.3A (Tc) | 2A (Tc) |
Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 1V @ 250µA |
Vgs (Max) | ±20V | ±20V | ±20V | ±8V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 1.5V, 4.5V |
FET Typ | P-Channel | N-Channel | N-Channel | N-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden SQ2389ES-T1_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQ2389ES-T1_GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.