SQ2319ADS-T1_BE3 Tech Spezifikatioune
Vishay Siliconix - SQ2319ADS-T1_BE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQ2319ADS-T1_BE3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | SOT-23-3 (TO-236) | |
Serie | Automotive, AEC-Q101, TrenchFET® | |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V | |
Power Dissipation (Max) | 2.5W (Tc) | |
Package / Case | TO-236-3, SC-59, SOT-23-3 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.6A (Tc) | |
Basis Produktnummer | SQ2319 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQ2319ADS-T1_BE3.
Produktiounsattriff | ||||
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Part Number | SQ2319ADS-T1_BE3 | SQ2319ES-T1-GE3 | SQ2337ES-T1_BE3 | SQ2325ES-T1_GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 620 pF @ 20 V | 620 pF @ 25 V | 620 pF @ 40 V | 250 pF @ 50 V |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 40 V | 40 V | 80 V | 150 V |
Power Dissipation (Max) | 2.5W (Tc) | - | 3W (Tc) | 3W (Tc) |
Vgs (Max) | ±20V | - | ±20V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TA) |
Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V | 16 nC @ 10 V | 18 nC @ 10 V | 10 nC @ 10 V |
Package / Case | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) | SOT-23-3 (TO-236) |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | - | 6V, 10V | 10V |
Serie | Automotive, AEC-Q101, TrenchFET® | - | Automotive, AEC-Q101, TrenchFET® | Automotive, AEC-Q101, TrenchFET® |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3A, 10V | 75mOhm @ 3A, 10V | 290mOhm @ 1.2A, 10V | 1.77Ohm @ 500mA, 10V |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 3.5V @ 250µA |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.6A (Tc) | 4.6A (Tc) | 2.2A (Tc) | 840mA (Tc) |
Basis Produktnummer | SQ2319 | SQ2319 | SQ2337 | SQ2325 |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden SQ2319ADS-T1_BE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQ2319ADS-T1_BE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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