SQ1912AEEH-T1_GE3 Tech Spezifikatioune
Vishay Siliconix - SQ1912AEEH-T1_GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SQ1912AEEH-T1_GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | SC-70-6 | |
| Serie | Automotive, AEC-Q101, TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.2A, 4.5V | |
| Power - Max | 1.5W | |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 1.25nC @ 4.5V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 800mA (Tc) | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | SQ1912 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SQ1912AEEH-T1_GE3.
| Produktiounsattriff |  |
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 |
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|---|---|---|---|---|
| Part Number | SQ1912AEEH-T1_GE3 | SQ1539EH-T1_GE3 | SQ1470AEH-T1_GE3 | SQ1539EH-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Electro-Films (EFI) / Vishay |
| Power - Max | 1.5W | 1.5W | - | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 800mA (Tc) | 850mA (Tc) | 1.7A (Tc) | - |
| Operatioun Temperatur | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Konfiguratioun | 2 N-Channel (Dual) | N and P-Channel | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 2.6V @ 250µA | 1.6V @ 250µA | - |
| Supplier Device Package | SC-70-6 | PowerPAK® SC-70-6 Dual | SC-70-6 | - |
| Rds On (Max) @ Id, Vgs | 280mOhm @ 1.2A, 4.5V | 280mOhm @ 1A, 10V, 940mOhm @ 500mA, 10V | 65mOhm @ 4.2A, 4.5V | - |
| FET Feature | - | - | - | - |
| Input Capacitance (Ciss) (Max) @ Vds | 27pF @ 10V | 48pF @ 15V, 50pF @ 15V | 450 pF @ 15 V | - |
| Serie | Automotive, AEC-Q101, TrenchFET® | TrenchFET® | Automotive, AEC-Q101, TrenchFET® | - |
| Gate Charge (Qg) (Max) @ Vgs | 1.25nC @ 4.5V | 1.4nC @ 4.5V, 1.6nC @ 4.5V | 5.2 nC @ 4.5 V | - |
| Basis Produktnummer | SQ1912 | SQ1539 | SQ1470 | - |
| Package / Case | 6-TSSOP, SC-88, SOT-363 | PowerPAK® SC-70-6 Dual | 6-TSSOP, SC-88, SOT-363 | - |
| Entworf fir Source Voltage (Vdss) | 20V | 30V | 30 V | - |
Eroflueden SQ1912AEEH-T1_GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SQ1912AEEH-T1_GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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