SIZ710DT-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIZ710DT-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIZ710DT-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-PowerPair™ | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 19A, 10V | |
Power - Max | 27W, 48W | |
Package / Case | 6-PowerPair™ | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 20V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A, 35A | |
Konfiguratioun | 2 N-Channel (Half Bridge) | |
Basis Produktnummer | SIZ710 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIZ710DT-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SIZ710DT-T1-GE3 | SIZ728DT-T1-GE3 | SIZ704DT-T1-GE3 | SIZ790DT-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power - Max | 27W, 48W | 27W, 48W | 20W, 30W | 27W, 48W |
Basis Produktnummer | SIZ710 | SIZ728 | SIZ704 | SIZ790 |
Package / Case | 6-PowerPair™ | 6-PowerPair™ | 6-PowerPair™ | 6-PowerPair™ |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Supplier Device Package | 6-PowerPair™ | 6-PowerPair™ | 6-PowerPair™ | 6-PowerPair™ |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | 820pF @ 10V | 890pF @ 12.5V | 435pF @ 15V | 830pF @ 15V |
Entworf fir Source Voltage (Vdss) | 20V | 25V | 30V | 30V |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V | 26nC @ 10V | 12nC @ 10V | 24nC @ 10V |
Konfiguratioun | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) | 2 N-Channel (Half Bridge) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 16A, 35A | 16A, 35A | 12A, 16A | 16A, 35A |
Rds On (Max) @ Id, Vgs | 6.8mOhm @ 19A, 10V | 7.7mOhm @ 18A, 10V | 24mOhm @ 7.8A, 10V | 9.3mOhm @ 15A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | SkyFET®, TrenchFET® |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA | 2.2V @ 250µA |
Eroflueden SIZ710DT-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIZ710DT-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.