SISS26LDN-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SISS26LDN-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SISS26LDN-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® 1212-8S | |
| Serie | TrenchFET® Gen IV | |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 15A, 10V | |
| Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) | |
| Package / Case | PowerPAK® 1212-8S | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23.7A (Ta), 81.2A (Tc) | |
| Basis Produktnummer | SISS26 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SISS26LDN-T1-GE3.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | SISS26LDN-T1-GE3 | SISS27ADN-T1-GE3 | SISS40DN-T1-GE3 | SISS02DN-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23.7A (Ta), 81.2A (Tc) | 50A (Tc) | 36.5A (Tc) | 51A (Ta), 80A (Tc) |
| Power Dissipation (Max) | 4.8W (Ta), 57W (Tc) | 57W (Tc) | 3.7W (Ta), 52W (Tc) | 5W (Ta), 65.7W (Tc) |
| Package / Case | PowerPAK® 1212-8S | PowerPAK® 1212-8S | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
| Basis Produktnummer | SISS26 | SISS27 | SISS40 | SISS02 |
| FET Feature | - | - | - | - |
| Serie | TrenchFET® Gen IV | TrenchFET® Gen III | ThunderFET® | TrenchFET® Gen IV |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | 55 nC @ 4.5 V | 24 nC @ 10 V | 83 nC @ 10 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | P-Channel | N-Channel | N-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 6V, 10V | 4.5V, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.2V @ 250µA | 3.5V @ 250µA | 2.2V @ 250µA |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Vgs (Max) | ±20V | ±20V | ±20V | +16V, -12V |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 100 V | 25 V |
| Supplier Device Package | PowerPAK® 1212-8S | PowerPAK® 1212-8S | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 30 V | 4660 pF @ 15 V | 845 pF @ 50 V | 4450 pF @ 10 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 15A, 10V | 5.1mOhm @ 15A, 10V | 21mOhm @ 10A, 10V | 1.2mOhm @ 15A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden SISS26LDN-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SISS26LDN-T1-GE3 - Vishay Siliconix.
SISM760LVSISSISS27ADN-T1-GE3Vishay SiliconixMOSFET P-CH 30V 50A PPAK1212-8S
SISS26DN-T1-GE3VishaySISS40DN-T1-GE3Vishay SiliconixMOSFET N-CH 100V 36.5A PPAKSISS02DN-T1-GE3Vishay SiliconixMOSFET N-CH 25V 51A/80A PPAKSISS12DN-T1-GE3Vishay SiliconixMOSFET N-CH 40V 37.5A/60A PPAKSISS40DNElectro-Films (EFI) / VishaySISS32DN-T1-GE3Vishay SiliconixMOSFET N-CH 80V 17.4A/63A PPAKSISS23DN-T1-GE3 MOSElectro-Films (EFI) / VishaySISS10ADN-T1-GE3Vishay SiliconixMOSFET N-CH 40V 31.7A/109A PPAKSISS23DN-T1-GE3Vishay SiliconixMOSFET P-CH 20V 50A PPAK 1212-8SSISS32LDN-T1-GE3VishaySISS42LDN-T1-GE3Vishay SiliconixMOSFET N-CH 100V 11.3A/39A PPAKSISS27DN-T1-GE3Vishay SiliconixMOSFET P-CH 30V 50A PPAK 1212-8SSISS05DN-T1-GE3Vishay SiliconixMOSFET P-CH 30V 29.4A/108A PPAKSISS32ADN-T1-GE3VishaySISS04DN-T1-GE3Vishay SiliconixMOSFET N-CH 30V 50.5A/80A PPAKSISS42DN-T1-GE3Vishay SiliconixMOSFET N-CH 100V 11.8/40.5A PPAK| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.