SIS606BDN-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIS606BDN-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIS606BDN-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® 1212-8 | |
Serie | TrenchFET® Gen IV | |
Rds On (Max) @ Id, Vgs | 17.4mOhm @ 10A, 10V | |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) | |
Package / Case | PowerPAK® 1212-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 7.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.4A (Ta), 35.3A (Tc) | |
Basis Produktnummer | SIS606 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIS606BDN-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SIS606BDN-T1-GE3 | SIS626DN-T1-GE3 | SIS612EDNT-T1-GE3 | SIS6215 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | SIS |
Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 50 V | 1925 pF @ 15 V | 2060 pF @ 10 V | - |
Vgs (th) (Max) @ Id | 4V @ 250µA | 1.4V @ 250µA | 1.2V @ 1mA | - |
Serie | TrenchFET® Gen IV | - | TrenchFET® | - |
FET Feature | - | - | - | - |
Basis Produktnummer | SIS606 | SIS626 | SIS612 | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
FET Typ | N-Channel | N-Channel | N-Channel | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
Package / Case | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8S | - |
Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) | 52W (Tc) | 3.7W (Ta), 52W (Tc) | - |
Supplier Device Package | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8S | - |
Fuert Volt (Max Rds On, Min Rds On) | 7.5V, 10V | 2.5V, 10V | 2.5V, 4.5V | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 9.4A (Ta), 35.3A (Tc) | 16A (Tc) | 50A (Tc) | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Entworf fir Source Voltage (Vdss) | 100 V | 25 V | 20 V | - |
Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 60 nC @ 10 V | 70 nC @ 10 V | - |
Rds On (Max) @ Id, Vgs | 17.4mOhm @ 10A, 10V | 9mOhm @ 10A, 10V | 3.9mOhm @ 14A, 4.5V | - |
Vgs (Max) | ±20V | ±12V | ±12V | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
Eroflueden SIS606BDN-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIS606BDN-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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