SIRA80DP-T1-RE3 Tech Spezifikatioune
Vishay Siliconix - SIRA80DP-T1-RE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIRA80DP-T1-RE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
| Vgs (Max) | +20V, -16V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Serie | TrenchFET® Gen IV | |
| Rds On (Max) @ Id, Vgs | 0.62mOhm @ 20A, 10V | |
| Power Dissipation (Max) | 104W (Tc) | |
| Package / Case | PowerPAK® SO-8 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 9530 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | |
| Basis Produktnummer | SIRA80 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIRA80DP-T1-RE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIRA80DP-T1-RE3 | SIRA58DP-T1-GE3 | SIRA84BDP-T1-GE3 | SIRA54DP-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Vgs (Max) | +20V, -16V | +20V, -16V | +20V, -16V | +20V, -16V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Vgs (th) (Max) @ Id | 2.2V @ 250µA | 2.4V @ 250µA | 2.4V @ 250µA | 2.3V @ 250µA |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Serie | TrenchFET® Gen IV | TrenchFET® | TrenchFET® Gen IV | TrenchFET® Gen IV |
| Rds On (Max) @ Id, Vgs | 0.62mOhm @ 20A, 10V | 2.65mOhm @ 15A, 10V | 4.6mOhm @ 15A, 10V | 2.35mOhm @ 15A, 10V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Gate Charge (Qg) (Max) @ Vgs | 188 nC @ 10 V | 75 nC @ 10 V | 32 nC @ 10 V | 48 nC @ 4.5 V |
| Entworf fir Source Voltage (Vdss) | 30 V | 40 V | 30 V | 40 V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| FET Feature | - | - | - | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 100A (Tc) | 60A (Tc) | 22A (Ta), 70A (Tc) | 60A (Tc) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 104W (Tc) | 27.7W (Tc) | 3.7W (Ta), 36W (Tc) | 36.7W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 9530 pF @ 15 V | 3750 pF @ 20 V | 1050 pF @ 15 V | 5300 pF @ 20 V |
| Basis Produktnummer | SIRA80 | SIRA58 | SIRA84 | SIRA54 |
Eroflueden SIRA80DP-T1-RE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIRA80DP-T1-RE3 - Vishay Siliconix.
SIRA58DP-T1-GE3Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8SIRA84BDP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 22A/70A PPAK SO8SIRA54DP-T1-GE3Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8SIRA88DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 45.5A PPAK SO-8SIRA72DP-T1-GE3Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8SIRA99DP-T1-GE3Vishay SiliconixMOSFET P-CH 30V 47.9A/195A PPAKSIRA52DP-T1-GE3Vishay SiliconixMOSFET N-CH 40V 60A PPAK SO-8SIRA64DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8SIRA90DP-T1-RE3Vishay SiliconixMOSFET N-CH 30V 100A PPAK SO-8
SIRB40DP-T1-GE3VishaySIRAB39R1SILANSIRA90DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 100A PPAK SO-8SIRAB39R2SILANSIRA88DP-T1-GE3-GElectro-Films (EFI) / VishaySIRA60DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 100A PPAK SO-8SIRA62DP-T1-RE3Vishay SiliconixMOSFET N-CH 30V 51.4A/80A PPAKSIRA66DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 50A PPAK SO-8SIRA64DP-T1-RE3Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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