SIR840DP-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIR840DP-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIR840DP-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | - | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | - | |
| Power Dissipation (Max) | - | |
| Package / Case | PowerPAK® SO-8 |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Package protegéieren | Tape & Reel (TR) | |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | |
| Basis Produktnummer | SIR840 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIR840DP-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIR840DP-T1-GE3 | SIR838DP-T1-GE3 | SIR826DP-T1-GE3 | SIR846DP-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Basis Produktnummer | SIR840 | SIR838 | SIR826 | SIR846 |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Power Dissipation (Max) | - | 5.4W (Ta), 96W (Tc) | 6.25W (Ta), 104W (Tc) | 6.25W (Ta), 104W (Tc) |
| Serie | - | TrenchFET® | TrenchFET® | TrenchFET® |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 30 V | 150 V | 80 V | 100 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Vgs (th) (Max) @ Id | - | 4V @ 250µA | 2.8V @ 250µA | 3.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | - | 33mOhm @ 8.3A, 10V | 4.8mOhm @ 20A, 10V | 7.8mOhm @ 20A, 10V |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | - | 35A (Tc) | 60A (Tc) | 60A (Tc) |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden SIR840DP-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIR840DP-T1-GE3 - Vishay Siliconix.
SIR846ADPElectro-Films (EFI) / VishaySIR836DPElectro-Films (EFI) / VishaySIR850DP-T1-GE3 MOSElectro-Films (EFI) / VishaySIR840DPSISiR840DP-T1-E3Electro-Films (EFI) / VishaySiR850DP-T1-E3Electro-Films (EFI) / VishaySIR838DP-T1-GE3Vishay SiliconixMOSFET N-CH 150V 35A PPAK SO-8SIR826DP-T1-GE3Vishay SiliconixMOSFET N-CH 80V 60A PPAK SO-8SIR846DP-T1-GE3Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8SIR836DP-T1-GE3Vishay SiliconixMOSFET N-CH 40V 21A PPAK SO-8SIR846ADP-T1-GE3 MOSElectro-Films (EFI) / VishaySIR844DP-T1-GE3Vishay SiliconixMOSFET N-CH 25V 50A PPAK SO-8SIR826LDP-T1-RE3Vishay SiliconixMOSFET N-CH 80V 21.3A/86A PPAKSIR836DP-T1-GE3 MOSElectro-Films (EFI) / VishaySIR846ADP-T1-GE3Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8SIR850DPSISIR838ADP-T1-GE3Electro-Films (EFI) / VishaySIR850DP-T1-GE3Vishay SiliconixMOSFET N-CH 25V 30A PPAK SO-8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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