SIR820DP-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIR820DP-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIR820DP-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 3mOhm @ 15A, 10V | |
Power Dissipation (Max) | 37.8W (Tc) | |
Package / Case | PowerPAK® SO-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 3512 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | |
Basis Produktnummer | SIR820 |
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Produktiounsattriff | ||||
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Part Number | SIR820DP-T1-GE3 | SIR826BDP-T1-RE3 | SIR826LDP-T1-RE3 | SIR826ADP-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Input Capacitance (Ciss) (Max) @ Vds | 3512 pF @ 15 V | 3030 pF @ 40 V | 3840 pF @ 40 V | 2800 pF @ 40 V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 40A (Tc) | 19.8A (Ta), 80.8A (Tc) | 21.3A (Ta), 86A (Tc) | 60A (Tc) |
FET Feature | - | - | - | - |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | 3.8V @ 250µA | 2.4V @ 250µA | 2.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 95 nC @ 10 V | 69 nC @ 10 V | 91 nC @ 10 V | 86 nC @ 10 V |
Serie | - | TrenchFET® Gen IV | TrenchFET® Gen IV | TrenchFET® |
Power Dissipation (Max) | 37.8W (Tc) | 5W (Ta), 83W (Tc) | 5W (Ta), 83W (Tc) | 6.25W (Ta), 104W (Tc) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Rds On (Max) @ Id, Vgs | 3mOhm @ 15A, 10V | 5.1mOhm @ 15A, 10V | 5mOhm @ 15A, 10V | 5.5mOhm @ 20A, 10V |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Entworf fir Source Voltage (Vdss) | 30 V | 80 V | 80 V | 80 V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 7.5V, 10V | 10V | 4.5V, 10V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Basis Produktnummer | SIR820 | SIR826 | SIR826 | SIR826 |
Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Eroflueden SIR820DP-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIR820DP-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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