SIR800ADP-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIR800ADP-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIR800ADP-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Vgs (Max) | +12V, -8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Serie | TrenchFET® Gen IV | |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 10A, 10V | |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) | |
| Package / Case | PowerPAK® SO-8 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3415 pF @ 10 V | |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50.2A (Ta), 177A (Tc) | |
| Basis Produktnummer | SIR800 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIR800ADP-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIR800ADP-T1-GE3 | SIR804DP-T1-GE3 | SIR798DP-T1-GE3 | SIR802DP-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Serie | TrenchFET® Gen IV | TrenchFET® | - | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) | 6.25W (Ta), 104W (Tc) | 83W (Tc) | 4.6W (Ta), 27.7W (Tc) |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Gate Charge (Qg) (Max) @ Vgs | 53 nC @ 10 V | 76 nC @ 10 V | 130 nC @ 10 V | 32 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | 4.5V, 10V | 4.5V, 10V | 2.5V, 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 3415 pF @ 10 V | 2450 pF @ 50 V | 5050 pF @ 15 V | 1785 pF @ 10 V |
| Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Entworf fir Source Voltage (Vdss) | 20 V | 100 V | 30 V | 20 V |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 3V @ 250µA | 2.5V @ 250µA | 1.5V @ 250µA |
| FET Feature | - | - | Schottky Diode (Body) | - |
| Rds On (Max) @ Id, Vgs | 1.35mOhm @ 10A, 10V | 7.2mOhm @ 20A, 10V | 2.05Ohm @ 20A, 10V | 5mOhm @ 10A, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (Max) | +12V, -8V | ±20V | ±20V | ±12V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Basis Produktnummer | SIR800 | SIR804 | SIR798 | SIR802 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 50.2A (Ta), 177A (Tc) | 60A (Tc) | 60A (Tc) | 30A (Tc) |
Eroflueden SIR800ADP-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIR800ADP-T1-GE3 - Vishay Siliconix.
SiR808DPElectro-Films (EFI) / VishaySIR804DP-T1-GE3Vishay SiliconixMOSFET N-CH 100V 60A PPAK SO-8SIR798DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8SiR800DP-T1-E3Electro-Films (EFI) / VishaySIR802DP-T1-GE3Vishay SiliconixMOSFET N-CH 20V 30A PPAK SO-8SIR808DP-T1-GE3Vishay SiliconixMOSFET N-CH 25V 20A PPAK SO-8SIR800DP-T1-GE3Vishay SiliconixMOSFET N-CH 20V 50A PPAK SO-8SIR788DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 60A PPAK SO-8SIR740DP-T1-GE3Electro-Films (EFI) / VishaySIR7450DP-T1-GE3Electro-Films (EFI) / VishaySIR770DP-T1-GE3Vishay SiliconixMOSFET 2N-CH 30V 8A PPAK SO-8SIR800DP-T1-GE3 MOSElectro-Films (EFI) / VishaySIR698DP-T1-GE3Vishay SiliconixMOSFET N-CH 100V 7.5A PPAK SO-8SIR804DP-T1-GE2Electro-Films (EFI) / VishaySIR800DPElectro-Films (EFI) / VishaySIR774DP-T1-GE3Vishay SiliconixMOSFET N-CH 30VSIR770DP-T1-GE3 MOSElectro-Films (EFI) / VishaySiR770DP-T1-E3Electro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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