SIR186LDP-T1-RE3 Tech Spezifikatioune
Vishay Siliconix - SIR186LDP-T1-RE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIR186LDP-T1-RE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® SO-8 | |
| Serie | TrenchFET® Gen IV | |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 15A, 10V | |
| Power Dissipation (Max) | 5W (Ta), 57W (Tc) | |
| Package / Case | PowerPAK® SO-8 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 30 V | |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 60 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23.8A (Ta), 80.3A (Tc) |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
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| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | SIR186LDP-T1-RE3 | SIR402DP-T1-GE3 | SIR172DP-T1-GE3 | SIR330DP-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 4.4mOhm @ 15A, 10V | 6mOhm @ 20A, 10V | 8.9mOhm @ 16.1A, 10V | 5.6mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V | 42 nC @ 10 V | 30 nC @ 10 V | 35 nC @ 10 V |
| Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| Entworf fir Source Voltage (Vdss) | 60 V | 30 V | 30 V | 30 V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power Dissipation (Max) | 5W (Ta), 57W (Tc) | 4.2W (Ta), 36W (Tc) | 29.8W (Tc) | 5W (Ta), 27.7W (Tc) |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 23.8A (Ta), 80.3A (Tc) | 35A (Tc) | 20A (Tc) | 35A (Tc) |
| Serie | TrenchFET® Gen IV | TrenchFET® | TrenchFET® | TrenchFET® |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 1980 pF @ 30 V | 1700 pF @ 15 V | 997 pF @ 15 V | 1300 pF @ 15 V |
Eroflueden SIR186LDP-T1-RE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIR186LDP-T1-RE3 - Vishay Siliconix.
SiR172DP-T1-E3Electro-Films (EFI) / VishaySIR402DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8SiR402DP-T1-E3Electro-Films (EFI) / VishaySIR402DPElectro-Films (EFI) / VishaySIR172DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 20A PPAK SO-8SIR330DP-T1-GE3Vishay SiliconixMOSFET N-CH 30V 35A PPAK SO-8SIR316DP-T1-GE3Electro-Films (EFI) / VishaySIR180ADP-T1-RE3VishaySIR172DPElectro-Films (EFI) / VishaySIR182DP-T1-REElectro-Films (EFI) / VishaySIR402DP-T1-GE3 MOSElectro-Films (EFI) / VishaySIR188DP-T1-RE3Vishay SiliconixMOSFET N-CH 60V 25.5A/60A PPAKSIR403EDP-T1Electro-Films (EFI) / VishaySIR184DP-T1-RE3Vishay SiliconixMOSFET N-CH 60V 20.7A/73A PPAKSIR172DP-T1-GE3 MOSElectro-Films (EFI) / VishaySIR180DP-T1-RE3VishaySIR401DP-T1-GE3Vishay SiliconixMOSFET P-CH 20V 50A PPAK SO-8SIR182DP-T1-RE3Vishay SiliconixMOSFET N-CH 60V 60A PPAK SO-8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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