SIR112DP-T1-RE3 Tech Spezifikatioune
Vishay Siliconix - SIR112DP-T1-RE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIR112DP-T1-RE3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | |
Vgs (Max) | +20V, -16V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 | |
Serie | TrenchFET® Gen IV | |
Rds On (Max) @ Id, Vgs | 1.96mOhm @ 10A, 10V | |
Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) | |
Package / Case | PowerPAK® SO-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 20 V | |
Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 40 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37.6A (Ta), 133A (Tc) | |
Basis Produktnummer | SIR112 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIR112DP-T1-RE3.
Produktiounsattriff | ||||
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Part Number | SIR112DP-T1-RE3 | SIR124DP-T1-RE3 | SIR140DP-T1-RE3 | SIR104LDP-T1-RE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 7.5V, 10V | 4.5V, 10V | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 1.96mOhm @ 10A, 10V | 8.4mOhm @ 10A, 10V | 0.67mOhm @ 20A, 10V | 6.1mOhm @ 15A, 10V |
Basis Produktnummer | SIR112 | SIR124 | SIR140 | SIR104 |
Vgs (th) (Max) @ Id | 2.4V @ 250µA | 3.8V @ 250µA | 2.1V @ 250µA | 3V @ 250µA |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (Max) | +20V, -16V | ±20V | +20V, -16V | ±20V |
Power Dissipation (Max) | 5W (Ta), 62.5W (Tc) | 5W (Ta), 62.5W (Tc) | 6.25W (Ta), 104W (Tc) | 5.4W (Ta), 100W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 4270 pF @ 20 V | 1666 pF @ 40 V | 8150 pF @ 10 V | 4870 pF @ 50 V |
Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V | 40 nC @ 10 V | 170 nC @ 10 V | 110 nC @ 10 V |
Serie | TrenchFET® Gen IV | TrenchFET® Gen IV | TrenchFET® Gen IV | TrenchFET® |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 37.6A (Ta), 133A (Tc) | 16.1A (Ta), 56.8A (Tc) | 71.9A (Ta), 100A (Tc) | 18.8A (Ta), 81A (Tc) |
Entworf fir Source Voltage (Vdss) | 40 V | 80 V | 25 V | 100 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Eroflueden SIR112DP-T1-RE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIR112DP-T1-RE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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