SIHP4N80E-GE3 Tech Spezifikatioune
Vishay Siliconix - SIHP4N80E-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIHP4N80E-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | E | |
| Rds On (Max) @ Id, Vgs | 1.27Ohm @ 2A, 10V | |
| Power Dissipation (Max) | 69W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 800 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A (Tc) | |
| Basis Produktnummer | SIHP4 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIHP4N80E-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIHP4N80E-GE3 | SIHP30N60E-E3 | SIHP24N65E-E3 | SIHP5N50D-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 1.27Ohm @ 2A, 10V | 125mOhm @ 15A, 10V | 145mOhm @ 12A, 10V | 1.5Ohm @ 2.5A, 10V |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | 130 nC @ 10 V | 122 nC @ 10 V | 20 nC @ 10 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 5V @ 250µA |
| Basis Produktnummer | SIHP4 | SIHP30 | SIHP24 | SIHP5 |
| Input Capacitance (Ciss) (Max) @ Vds | 622 pF @ 100 V | 2600 pF @ 100 V | 2740 pF @ 100 V | 325 pF @ 100 V |
| Entworf fir Source Voltage (Vdss) | 800 V | 600 V | 650 V | 500 V |
| Power Dissipation (Max) | 69W (Tc) | 250W (Tc) | 250W (Tc) | 104W (Tc) |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Serie | E | - | - | - |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A (Tc) | 29A (Tc) | 24A (Tc) | 5.3A (Tc) |
Eroflueden SIHP4N80E-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIHP4N80E-GE3 - Vishay Siliconix.
SIHP30N60E-E3Vishay SiliconixMOSFET N-CH 600V 29A TO220ABSIHP33N60EVISYASIHP24N65E-E3Vishay SiliconixMOSFET N-CH 650V 24A TO220ABSIHP5N50D-E3Vishay SiliconixMOSFET N-CH 500V 5.3A TO220AB
SiHP30N60EElectro-Films (EFI) / VishaySIHP33N60E-GE3Vishay SiliconixMOSFET N-CH 600V 33A TO220ABSIHP6N65E-GE3Vishay SiliconixMOSFET N-CH 650V 7A TO220ABSIHP30N60E-GE3Vishay SiliconixMOSFET N-CH 600V 29A TO220ABSIHP5N50DVBsemiSiHP8N50DElectro-Films (EFI) / VishaySiHP7N60EElectro-Films (EFI) / VishaySIHP35N60EElectro-Films (EFI) / VishaySIHP5N50D-GE3Vishay SiliconixMOSFET N-CH 500V 5.3A TO220ABSiHP6N40DElectro-Films (EFI) / VishaySIHP7N60E-GE3Vishay SiliconixMOSFET N-CH 600V 7A TO220ABSiHP25N40DElectro-Films (EFI) / VishaySIHP6N65EElectro-Films (EFI) / VishaySIHP24N65E-GE3Vishay SiliconixMOSFET N-CH 650V 24A TO220AB| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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