SIHP12N60E-E3 Tech Spezifikatioune
Vishay Siliconix - SIHP12N60E-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIHP12N60E-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-220AB | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V | |
| Power Dissipation (Max) | 147W (Tc) | |
| Package / Case | TO-220-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 937 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
| Basis Produktnummer | SIHP12 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIHP12N60E-E3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIHP12N60E-E3 | SIHP17N80E-GE3 | SIHP15N65E-GE3 | SIHP12N60E-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 | TO-220-3 |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 15A (Tc) | 15A (Tc) | 12A (Tc) |
| Supplier Device Package | TO-220AB | TO-220AB | TO-220AB | TO-220AB |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 147W (Tc) | 208W (Tc) | 34W (Tc) | 147W (Tc) |
| FET Feature | - | - | - | - |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
| Basis Produktnummer | SIHP12 | SIHP17 | SIHP15 | SIHP12 |
| Entworf fir Source Voltage (Vdss) | 600 V | 800 V | 650 V | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 58 nC @ 10 V | 122 nC @ 10 V | 96 nC @ 10 V | 58 nC @ 10 V |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 937 pF @ 100 V | 2408 pF @ 100 V | 1640 pF @ 100 V | 937 pF @ 100 V |
| Serie | - | E | - | E |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 6A, 10V | 290mOhm @ 8.5A, 10V | 280mOhm @ 8A, 10V | 380mOhm @ 6A, 10V |
Eroflueden SIHP12N60E-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIHP12N60E-E3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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