SIHG33N60EF-GE3 Tech Spezifikatioune
Vishay Siliconix - SIHG33N60EF-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIHG33N60EF-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4V @ 250µA | |
Vgs (Max) | ±30V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | TO-247AC | |
Serie | - | |
Rds On (Max) @ Id, Vgs | 98mOhm @ 16.5A, 10V | |
Power Dissipation (Max) | 278W (Tc) | |
Package / Case | TO-247-3 | |
Package protegéieren | Tube |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Through Hole | |
Input Capacitance (Ciss) (Max) @ Vds | 3454 pF @ 100 V | |
Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 600 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | |
Basis Produktnummer | SIHG33 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIHG33N60EF-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SIHG33N60EF-GE3 | SIHG32N50D-GE3 | SIHG47N60E-GE3 | SIHG33N60E-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package protegéieren | Tube | Tube | Tube | Tube |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 98mOhm @ 16.5A, 10V | 150mOhm @ 16A, 10V | 64mOhm @ 24A, 10V | 99mOhm @ 16.5A, 10V |
Power Dissipation (Max) | 278W (Tc) | 390W (Tc) | 357W (Tc) | 278W (Tc) |
Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
FET Feature | - | - | - | - |
Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
Vgs (th) (Max) @ Id | 4V @ 250µA | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Gate Charge (Qg) (Max) @ Vgs | 155 nC @ 10 V | 96 nC @ 10 V | 220 nC @ 10 V | 150 nC @ 10 V |
Basis Produktnummer | SIHG33 | SIHG32 | SIHG47 | SIHG33 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 33A (Tc) | 30A (Tc) | 47A (Tc) | 33A (Tc) |
Input Capacitance (Ciss) (Max) @ Vds | 3454 pF @ 100 V | 2550 pF @ 100 V | 9620 pF @ 100 V | 3508 pF @ 100 V |
Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
Serie | - | - | - | - |
Entworf fir Source Voltage (Vdss) | 600 V | 500 V | 600 V | 600 V |
Eroflueden SIHG33N60EF-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIHG33N60EF-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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