SIHG22N60S-E3 Tech Spezifikatioune
Vishay Siliconix - SIHG22N60S-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIHG22N60S-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 4V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | TO-247AC | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 11A, 10V | |
| Power Dissipation (Max) | 250W (Tc) | |
| Package / Case | TO-247-3 | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Through Hole | |
| Input Capacitance (Ciss) (Max) @ Vds | 5620 pF @ 25 V | |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 600 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | |
| Basis Produktnummer | SIHG22 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIHG22N60S-E3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIHG22N60S-E3 | SIHG24N65E-E3 | SIHG28N65EF-GE3 | SIHG23N60E-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Entworf fir Source Voltage (Vdss) | 600 V | 650 V | 650 V | 600 V |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Package protegéieren | Tube | Tube | Tube | Tube |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 22A (Tc) | 24A (Tc) | 28A (Tc) | 23A (Tc) |
| Vgs (th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Package / Case | TO-247-3 | TO-247-3 | TO-247-3 | TO-247-3 |
| Serie | - | - | - | E |
| FET Feature | - | - | - | - |
| Power Dissipation (Max) | 250W (Tc) | 250W (Tc) | 250W (Tc) | 227W (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 5620 pF @ 25 V | 2740 pF @ 100 V | 3249 pF @ 100 V | 2418 pF @ 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V | 122 nC @ 10 V | 146 nC @ 10 V | 95 nC @ 10 V |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 11A, 10V | 145mOhm @ 12A, 10V | 117mOhm @ 14A, 10V | 158mOhm @ 12A, 10V |
| Supplier Device Package | TO-247AC | TO-247AC | TO-247AC | TO-247AC |
| Basis Produktnummer | SIHG22 | SIHG24 | SIHG28 | SIHG23 |
| Mounting Type | Through Hole | Through Hole | Through Hole | Through Hole |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TA) |
Eroflueden SIHG22N60S-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIHG22N60S-E3 - Vishay Siliconix.
SIHG24N65E-E3Vishay SiliconixMOSFET N-CH 650V 24A TO247ACSIHG28N65EF-GE3Vishay SiliconixMOSFET N-CH 650V 28A TO247AC
SIHG30N60EElectro-Films (EFI) / VishaySIHG22N60SElectro-Films (EFI) / VishaySIHG23N60E-GE3Vishay SiliconixMOSFET N-CH 600V 23A TO247ACSIHG24N65E-GE3Vishay SiliconixMOSFET N-CH 650V 24A TO247ACSIHG22N60E-GE3 MOSElectro-Films (EFI) / Vishay
SIHG20N50GIRSIHG21N60EF-GE3Vishay SiliconixMOSFET N-CH 600V 21A TO247ACSIHG22N50D-GE3Vishay SiliconixMOSFET N-CH 500V 22A TO247ACSIHG22N60E-GE3Vishay SiliconixMOSFET N-CH 600V 21A TO247ACSIHG24N65EElectro-Films (EFI) / VishaySIHG22N60S-E3 MOSElectro-Films (EFI) / VishaySIHG25N50E-GE3Vishay SiliconixMOSFET N-CH 500V 26A TO247ACSIHG22N60EElectro-Films (EFI) / VishaySiHG30N60AEL MOSElectro-Films (EFI) / VishaySIHG22N50D-E3Vishay SiliconixMOSFET N-CH 500V 22A TO247ACSIHG22N50D-E3 MOSElectro-Films (EFI) / Vishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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