SIHB10N40D-GE3 Tech Spezifikatioune
Vishay Siliconix - SIHB10N40D-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIHB10N40D-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 5V @ 250µA | |
| Vgs (Max) | ±30V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | D²PAK (TO-263) | |
| Serie | - | |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 5A, 10V | |
| Power Dissipation (Max) | 147W (Tc) | |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | |
| Package protegéieren | Tube |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 526 pF @ 100 V | |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | |
| Entworf fir Source Voltage (Vdss) | 400 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | |
| Basis Produktnummer | SIHB10 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIHB10N40D-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIHB10N40D-GE3 | SIHA22N60AEL-GE3 | SIHA12N60E-E3 | SIHB15N60E-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Power Dissipation (Max) | 147W (Tc) | 35W (Tc) | 33W (Tc) | 180W (Tc) |
| Supplier Device Package | D²PAK (TO-263) | TO-220 Full Pack | TO-220 Full Pack | D²PAK (TO-263) |
| Input Capacitance (Ciss) (Max) @ Vds | 526 pF @ 100 V | 1757 pF @ 100 V | 937 pF @ 100 V | 1350 pF @ 100 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Mounting Type | Surface Mount | Through Hole | Through Hole | Surface Mount |
| Vgs (th) (Max) @ Id | 5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Package protegéieren | Tube | Bulk | Tube | Bulk |
| Serie | - | EL | - | - |
| FET Feature | - | - | - | - |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Rds On (Max) @ Id, Vgs | 600mOhm @ 5A, 10V | 180mOhm @ 11A, 10V | 380mOhm @ 6A, 10V | 280mOhm @ 8A, 10V |
| Entworf fir Source Voltage (Vdss) | 400 V | 600 V | 600 V | 600 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10A (Tc) | 21A (Tc) | 12A (Tc) | 15A (Tc) |
| Basis Produktnummer | SIHB10 | SIHA22 | SIHA12 | SIHB15 |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-220-3 Full Pack | TO-220-3 Full Pack | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 82 nC @ 10 V | 58 nC @ 10 V | 78 nC @ 10 V |
| Fuert Volt (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V |
Eroflueden SIHB10N40D-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIHB10N40D-GE3 - Vishay Siliconix.
SIH31-12RFujitsu Electronics America, Inc.IGBT ModuleSIHA22N60AEL-GE3Vishay SiliconixMOSFET N-CH 600V 21A TO220SIHA12N60E-E3Vishay SiliconixMOSFET N-CH 600V 12A TO220
SiHB16N50CElectro-Films (EFI) / VishaySIHA11N80EElectro-Films (EFI) / VishaySIHB21N60EF-GE3VishaySIHB15N60E-GE3Vishay SiliconixMOSFET N-CH 600V 15A D2PAKSIHA15N60E-E3Vishay SiliconixMOSFET N-CH 600V 15A TO220SIHA22N60E-E3Vishay SiliconixMOSFET N-CH 600V 21A TO220SIHA105N60EF-GE3VishaySIHB16N50C-E3Vishay SiliconixMOSFET N-CH 500V 16A D2PAKSIHB22N60AE-GE3Vishay SiliconixMOSFET N-CH 600V 20A D2PAKSIHB12N50C-E3Vishay SiliconixMOSFET N-CH 500V 12A D2PAKSiHB12N50CElectro-Films (EFI) / VishaySIHB12N60E-GE3Vishay SiliconixMOSFET N-CH 600V 12A D2PAKSIHA22N60E-GE3Vishay SiliconixN-CHANNEL 600VSIHB12N60ET1-GE3Vishay SiliconixMOSFET N-CH 600V 12A TO263SIHA20N50E-E3Vishay SiliconixMOSFET N-CH 500V 19A TO220| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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