SIE812DF-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SIE812DF-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIE812DF-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 10-PolarPAK® (L) | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V | |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) | |
| Package / Case | 10-PolarPAK® (L) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 8300 pF @ 20 V | |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 40 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | |
| Basis Produktnummer | SIE812 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIE812DF-T1-E3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SIE812DF-T1-E3 | SIE848DF-T1-GE3 | SIE862DF-T1-GE3 | SIE874DF-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 2.5V @ 250µA | 2.2V @ 250µA | 2.2V @ 250µA |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 60A (Tc) | 60A (Tc) | 50A (Tc) | 60A (Tc) |
| Supplier Device Package | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 10-PolarPAK® (U) | 10-PolarPAK® (L) |
| Rds On (Max) @ Id, Vgs | 2.6mOhm @ 25A, 10V | 1.6mOhm @ 25A, 10V | 3.2mOhm @ 20A, 10V | 1.17mOhm @ 20A, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | 10-PolarPAK® (L) | 10-PolarPAK® (L) | 10-PolarPAK® (U) | 10-PolarPAK® (L) |
| Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 10 V | 138 nC @ 10 V | 75 nC @ 10 V | 145 nC @ 10 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Entworf fir Source Voltage (Vdss) | 40 V | 30 V | 30 V | 20 V |
| Basis Produktnummer | SIE812 | SIE848 | SIE862 | SIE874 |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | 8300 pF @ 20 V | 6100 pF @ 15 V | 3100 pF @ 15 V | 6200 pF @ 10 V |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 10V | 4.5V, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Power Dissipation (Max) | 5.2W (Ta), 125W (Tc) | 5.2W (Ta), 125W (Tc) | 5.2W (Ta), 104W (Tc) | 5.2W (Ta), 125W (Tc) |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
| FET Feature | - | - | - | - |
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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