SIA922EDJ-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIA922EDJ-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIA922EDJ-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1.4V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SC-70-6 Dual | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 64mOhm @ 3A, 4.5V | |
Power - Max | 7.8W | |
Package / Case | PowerPAK® SC-70-6 Dual | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | SIA922 |
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Produktiounsattriff | ||||
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Part Number | SIA922EDJ-T1-GE3 | SIA918EDJ-T1-GE3 | SIA921EDJ-T1-GE3 | SIA931DJ-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Rds On (Max) @ Id, Vgs | 64mOhm @ 3A, 4.5V | 58mOhm @ 3A, 4.5V | 59mOhm @ 3.6A, 4.5V | 65mOhm @ 3A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | - | - | - | 445pF @ 15V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | Logic Level Gate | - | Logic Level Gate | Logic Level Gate |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A | 4.5A (Tc) | 4.5A | 4.5A |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 P-Channel (Dual) |
Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | 5.5nC @ 4.5V | 23nC @ 10V | 13nC @ 10V |
Basis Produktnummer | SIA922 | SIA918 | SIA921 | SIA931 |
Power - Max | 7.8W | 7.8W | 7.8W | 7.8W |
Supplier Device Package | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package / Case | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 20V | 30V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 1.4V @ 250µA | 900mV @ 250µA | 1.4V @ 250µA | 2.2V @ 250µA |
Eroflueden SIA922EDJ-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIA922EDJ-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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