SIA527DJ-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIA527DJ-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIA527DJ-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SC-70-6 Dual | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 4.5V | |
Power - Max | 7.8W | |
Package / Case | PowerPAK® SC-70-6 Dual | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 6V | |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 12V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A | |
Konfiguratioun | N and P-Channel | |
Basis Produktnummer | SIA527 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIA527DJ-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SIA527DJ-T1-GE3 | SIA513DJ-T1-GE3 | SIA519EDJ-T1-GE3 | SIA537EDJ-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Entworf fir Source Voltage (Vdss) | 12V | 20V | 20V | 12V, 20V |
Power - Max | 7.8W | 6.5W | 7.8W | 7.8W |
Package / Case | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
Gate Charge (Qg) (Max) @ Vgs | 15nC @ 8V | 12nC @ 10V | 12nC @ 10V | 16nC @ 8V |
Supplier Device Package | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual | PowerPAK® SC-70-6 Dual |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Basis Produktnummer | SIA527 | SIA513 | SIA519 | SIA537 |
Rds On (Max) @ Id, Vgs | 29mOhm @ 5A, 4.5V | 60mOhm @ 3.4A, 4.5V | 40mOhm @ 4.2A, 4.5V | 28mOhm @ 5.2A, 4.5V |
Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (th) (Max) @ Id | 1V @ 250µA | 1.5V @ 250µA | 1.4V @ 250µA | 1V @ 250µA |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.5A | 4.5A | 4.5A | 4.5A |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 6V | 360pF @ 10V | 350pF @ 10V | 455pF @ 6V |
Eroflueden SIA527DJ-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIA527DJ-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.