SIA449DJ-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SIA449DJ-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SIA449DJ-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Vgs (Max) | ±12V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® SC-70-6 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V | |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | |
| Package / Case | PowerPAK® SC-70-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 2140 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | |
| FET Typ | P-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | |
| Basis Produktnummer | SIA449 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SIA449DJ-T1-GE3.
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|---|---|---|---|---|
| Part Number | SIA449DJ-T1-GE3 | SIA447DJ-T1-GE3 | SIA448DJ-T1-GE3 | SIA461DJ-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| FET Feature | - | - | - | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 10V | 1.5V, 4.5V | 1.5V, 4.5V | 1.8V, 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 2140 pF @ 15 V | 2880 pF @ 6 V | 1380 pF @ 1 V | 1300 pF @ 10 V |
| Supplier Device Package | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
| Power Dissipation (Max) | 3.5W (Ta), 19W (Tc) | 19W (Tc) | 3.5W (Ta), 19.2W (Tc) | 3.4W (Ta), 17.9W (Tc) |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 850mV @ 250µA | 1V @ 250µA | 1V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6A, 10V | 13.5mOhm @ 7A, 4.5V | 15mOhm @ 12.4A, 4.5V | 33mOhm @ 5.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V | 80 nC @ 8 V | 35 nC @ 8 V | 45 nC @ 8 V |
| Basis Produktnummer | SIA449 | SIA447 | SIA448 | SIA461 |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 12A (Tc) | 12A (Tc) | 12A (Tc) | 12A (Tc) |
| FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
| Vgs (Max) | ±12V | ±8V | ±8V | ±8V |
| Package / Case | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 |
| Entworf fir Source Voltage (Vdss) | 30 V | 12 V | 20 V | 20 V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden SIA449DJ-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SIA449DJ-T1-GE3 - Vishay Siliconix.
SIA4528-330KDelta ControlsSIA447DJ-T1-GE3Vishay SiliconixMOSFET P-CH 12V 12A PPAK SC70-6SIA448DJ-T1-GE3Vishay SiliconixMOSFET N-CH 20V 12A PPAK SC70-6SIA461DJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 12A PPAK SC70-6SIA450DJ-T1-GE3Vishay SiliconixMOSFET N-CH 240V 1.52A PPAKSiA445EDJ-T1-GE3 MOSCCSEMISIA443DJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 9A PPAK SC70-6SIA445EDJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 12A PPAK SC70-6SiA459EDJ-T1-GE3 MOSCCSEMISIA446DJ-T1-GE3Vishay SiliconixMOSFET N-CH 150V 7.7A PPAK SC70
SIA456DJ-T3-GE3VishaySiA447DJ-T1-GE3 MOSCCSEMISIA459EDJ-T1-GE3Vishay SiliconixMOSFET P-CH 20V 9A PPAK SC70-6SIA444DJT-T1-GE3Vishay SiliconixMOSFET N-CH 30V 12A PPAK SC70-6SiA444DJT-T1-GE3 MOSCCSEMISIA4528-100KDelta ControlsSIA4528-470KDelta ControlsSIA456DJ-T1-GE3Vishay SiliconixMOSFET N-CH 200V 2.6A PPAK SC70| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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