SI8901EDB-T2-E1 Tech Spezifikatioune
Vishay Siliconix - SI8901EDB-T2-E1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI8901EDB-T2-E1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 350µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-Micro Foot™ (2.36x1.56) | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | - | |
Power - Max | 1W | |
Package / Case | 6-MICRO FOOT®CSP | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Gate Charge (Qg) (Max) @ Vgs | - | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 20V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A | |
Konfiguratioun | 2 P-Channel (Dual) Common Drain | |
Basis Produktnummer | SI8901 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI8901EDB-T2-E1.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI8901EDB-T2-E1 | SI8902EDB-T2-E1 | SI8900EDB-T2-E1 | SI8902B-A01-GS |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Skyworks Solutions Inc. |
Power - Max | 1W | 1W | 1W | - |
Konfiguratioun | 2 P-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain | MUX-PGA-ADC |
Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 85°C |
Rds On (Max) @ Id, Vgs | - | - | - | - |
Supplier Device Package | 6-Micro Foot™ (2.36x1.56) | 6-Micro Foot™ (2.36x1.56) | 10-Micro Foot™ CSP (2x5) | 16-SOIC |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tube |
Basis Produktnummer | SI8901 | SI8902 | SI8900 | SI8902 |
Gate Charge (Qg) (Max) @ Vgs | - | - | - | - |
Vgs (th) (Max) @ Id | 1V @ 350µA | 1V @ 980µA | 1V @ 1.1mA | - |
Input Capacitance (Ciss) (Max) @ Vds | - | - | - | - |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | - |
Package / Case | 6-MICRO FOOT®CSP | 6-MICRO FOOT®CSP | 10-UFBGA, CSPBGA | 16-SOIC (0.295', 7.50mm Width) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A | 3.9A | 5.4A | - |
Eroflueden SI8901EDB-T2-E1 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI8901EDB-T2-E1 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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