SI8461DB-T2-E1 Tech Spezifikatioune
Vishay Siliconix - SI8461DB-T2-E1 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI8461DB-T2-E1
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 4-Microfoot | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 100mOhm @ 1.5A, 4.5V | |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) | |
Package / Case | 4-XFBGA, CSPBGA | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 10 V | |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 8 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | |
Basis Produktnummer | SI8461 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI8461DB-T2-E1.
Produktiounsattriff | ||||
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Part Number | SI8461DB-T2-E1 | SI8457DB-T1-E1 | SI8472DB-T2-E1 | SI8467DB-T2-E1 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package / Case | 4-XFBGA, CSPBGA | 4-UFBGA | 4-UFBGA | 4-XFBGA, CSPBGA |
Basis Produktnummer | SI8461 | SI8457 | SI8472 | SI8467 |
FET Feature | - | - | - | - |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 10 V | 2900 pF @ 6 V | 630 pF @ 10 V | 475 pF @ 10 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Supplier Device Package | 4-Microfoot | 4-MICRO FOOT® (1.6x1.6) | 4-MICRO FOOT® (1x1) | 4-Microfoot |
Vgs (th) (Max) @ Id | 1V @ 250µA | 900mV @ 250µA | 900mV @ 250µA | 1.5V @ 250µA |
Power Dissipation (Max) | 780mW (Ta), 1.8W (Tc) | 1.1W (Ta), 2.7W (Tc) | 780mW (Ta) | 780mW (Ta), 1.8W (Tc) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A (Ta) | 6.5A (Ta) | 3.3A (Ta) | 2.5A (Ta) |
Rds On (Max) @ Id, Vgs | 100mOhm @ 1.5A, 4.5V | 19mOhm @ 3A, 4.5V | 44mOhm @ 1.5A, 4.5V | 73mOhm @ 1A, 4.5V |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 8 V | 93 nC @ 8 V | 18 nC @ 8 V | 21 nC @ 10 V |
Fuert Volt (Max Rds On, Min Rds On) | 1.5V, 4.5V | 1.8V, 4.5V | 1.5V, 4.5V | 2.5V, 4.5V |
Entworf fir Source Voltage (Vdss) | 20 V | 12 V | 20 V | 20 V |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Vgs (Max) | ±8V | ±8V | ±8V | ±12V |
Eroflueden SI8461DB-T2-E1 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI8461DB-T2-E1 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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