SI7980DP-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI7980DP-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7980DP-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 Dual | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 22mOhm @ 5A, 10V | |
Power - Max | 19.8W, 21.9W | |
Package / Case | PowerPAK® SO-8 Dual | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 10V | |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 20V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A | |
Konfiguratioun | 2 N-Channel (Half Bridge) | |
Basis Produktnummer | SI7980 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI7980DP-T1-E3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI7980DP-T1-E3 | SI7997DP-T1-GE3 | SI7980DP-T1-GE3 | SI7960DP-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 10V | 6200pF @ 15V | 1010pF @ 10V | - |
FET Feature | - | - | - | Logic Level Gate |
Rds On (Max) @ Id, Vgs | 22mOhm @ 5A, 10V | 5.5mOhm @ 20A, 10V | 22mOhm @ 5A, 10V | 21mOhm @ 9.7A, 10V |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 20V | 30V | 20V | 60V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Konfiguratioun | 2 N-Channel (Half Bridge) | 2 P-Channel (Dual) | 2 N-Channel (Half Bridge) | 2 N-Channel (Dual) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | SI7980 | SI7997 | SI7980 | SI7960 |
Gate Charge (Qg) (Max) @ Vgs | 27nC @ 10V | 160nC @ 10V | 27nC @ 10V | 75nC @ 10V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A | 60A | 8A | 6.2A |
Power - Max | 19.8W, 21.9W | 46W | 19.8W, 21.9W | 1.4W |
Package / Case | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
Supplier Device Package | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual | PowerPAK® SO-8 Dual |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA | 3V @ 250µA |
Eroflueden SI7980DP-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7980DP-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.