SI7901EDN-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI7901EDN-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7901EDN-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 800µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® 1212-8 Dual | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 48mOhm @ 6.3A, 4.5V | |
Power - Max | 1.3W | |
Package / Case | PowerPAK® 1212-8 Dual | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | - | |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 20V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A | |
Konfiguratioun | 2 P-Channel (Dual) | |
Basis Produktnummer | SI7901 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI7901EDN-T1-E3.
Produktiounsattriff | ||||
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Part Number | SI7901EDN-T1-E3 | SI7904BDN-T1-E3 | SI7900AEDN-T1-GE3 | SI7900AEDN-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Basis Produktnummer | SI7901 | SI7904 | SI7900 | SI7900 |
Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | 20V |
Rds On (Max) @ Id, Vgs | 48mOhm @ 6.3A, 4.5V | 30mOhm @ 7.1A, 4.5V | 26mOhm @ 8.5A, 4.5V | 26mOhm @ 8.5A, 4.5V |
Konfiguratioun | 2 P-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) Common Drain | 2 N-Channel (Dual) Common Drain |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 4.3A | 6A | 6A | 6A |
Supplier Device Package | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Input Capacitance (Ciss) (Max) @ Vds | - | 860pF @ 10V | - | - |
Power - Max | 1.3W | 17.8W | 1.5W | 1.5W |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Vgs (th) (Max) @ Id | 1V @ 800µA | 1V @ 250µA | 900mV @ 250µA | 900mV @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V | 24nC @ 8V | 16nC @ 4.5V | 16nC @ 4.5V |
Package / Case | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual | PowerPAK® 1212-8 Dual |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Eroflueden SI7901EDN-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7901EDN-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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