SI7850ADP-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI7850ADP-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7850ADP-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.8V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 | |
Serie | TrenchFET® Gen IV | |
Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V | |
Power Dissipation (Max) | 3.6W (Ta), 35.7W (Tc) | |
Package / Case | PowerPAK® SO-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V | |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 60 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.3A (Ta), 12A (Tc) | |
Basis Produktnummer | SI7850 |
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Produktiounsattriff | ||||
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Part Number | SI7850ADP-T1-GE3 | SI7852ADP-T1-E3 | SI7848BDP-T1-E3 | SI7850DP-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
FET Feature | - | - | - | - |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.3A (Ta), 12A (Tc) | 30A (Tc) | 47A (Tc) | 6.2A (Ta) |
Power Dissipation (Max) | 3.6W (Ta), 35.7W (Tc) | 5W (Ta), 62.5W (Tc) | 4.2W (Ta), 36W (Tc) | 1.8W (Ta) |
Basis Produktnummer | SI7850 | SI7852 | SI7848 | SI7850 |
Entworf fir Source Voltage (Vdss) | 60 V | 80 V | 40 V | 60 V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 8V, 10V | 4.5V, 10V | 4.5V, 10V |
Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 30 V | 1825 pF @ 40 V | 2000 pF @ 20 V | - |
Rds On (Max) @ Id, Vgs | 19.5mOhm @ 10A, 10V | 17mOhm @ 10A, 10V | 9mOhm @ 16A, 10V | 22mOhm @ 10.3A, 10V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Vgs (th) (Max) @ Id | 2.8V @ 250µA | 4.5V @ 250µA | 3V @ 250µA | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V | 45 nC @ 10 V | 50 nC @ 10 V | 27 nC @ 10 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Serie | TrenchFET® Gen IV | TrenchFET® | TrenchFET® | TrenchFET® |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Eroflueden SI7850ADP-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7850ADP-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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