SI7483ADP-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI7483ADP-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7483ADP-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 24A, 10V | |
Power Dissipation (Max) | 1.9W (Ta) | |
Package / Case | PowerPAK® SO-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta) | |
Basis Produktnummer | SI7483 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI7483ADP-T1-E3.
Produktiounsattriff | ||||
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Part Number | SI7483ADP-T1-E3 | SI7478DP-T1-E3 | SI7485DP-T1-E3 | SI7483ADP-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | - | 4.5V, 10V |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Serie | TrenchFET® | TrenchFET® | - | TrenchFET® |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 900mV @ 1mA | 3V @ 250µA |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - | -55°C ~ 150°C (TJ) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Entworf fir Source Voltage (Vdss) | 30 V | 60 V | 20 V | 30 V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) | Tape & Reel (TR) |
FET Typ | P-Channel | N-Channel | P-Channel | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 160 nC @ 10 V | 150 nC @ 5 V | 180 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 5.7mOhm @ 24A, 10V | 7.5mOhm @ 20A, 10V | 7.3mOhm @ 20A, 4.5V | 5.7mOhm @ 24A, 10V |
FET Feature | - | - | - | - |
Vgs (Max) | ±20V | ±20V | - | ±20V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 14A (Ta) | 15A (Ta) | 12.5A (Ta) | 14A (Ta) |
Basis Produktnummer | SI7483 | SI7478 | SI7485 | SI7483 |
Power Dissipation (Max) | 1.9W (Ta) | 1.9W (Ta) | - | 1.9W (Ta) |
Eroflueden SI7483ADP-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7483ADP-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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