SI7186DP-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI7186DP-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7186DP-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 12.5mOhm @ 10A, 10V | |
Power Dissipation (Max) | 5.2W (Ta), 64W (Tc) | |
Package / Case | PowerPAK® SO-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 40 V | |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 10V | |
Entworf fir Source Voltage (Vdss) | 80 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 32A (Tc) | |
Basis Produktnummer | SI7186 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI7186DP-T1-E3.
Produktiounsattriff | ||||
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Part Number | SI7186DP-T1-E3 | SI7194DP-T1-GE3 | SI7178DP-T1-GE3 | SI7196DP-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Fuert Volt (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 10V | 4.5V, 10V |
Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 32A (Tc) | 60A (Tc) | 60A (Tc) | 16A (Tc) |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 2.6V @ 250µA | 4.5V @ 250µA | 3V @ 250µA |
Rds On (Max) @ Id, Vgs | 12.5mOhm @ 10A, 10V | 2mOhm @ 20A, 10V | 14mOhm @ 10A, 10V | 11mOhm @ 12A, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
FET Feature | - | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | WFET® |
Entworf fir Source Voltage (Vdss) | 80 V | 25 V | 100 V | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | 145 nC @ 10 V | 72 nC @ 10 V | 38 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2840 pF @ 40 V | 6590 pF @ 15 V | 2870 pF @ 50 V | 1577 pF @ 15 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Power Dissipation (Max) | 5.2W (Ta), 64W (Tc) | 5.4W (Ta), 83W (Tc) | 6.25W (Ta), 104W (Tc) | 5W (Ta), 41.6W (Tc) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Basis Produktnummer | SI7186 | SI7194 | SI7178 | SI7196 |
Eroflueden SI7186DP-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7186DP-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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