SI7159DP-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI7159DP-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7159DP-T1-GE3
Produktiounsattriff | Attributer Wäert | |
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Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
Vgs (Max) | ±25V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® SO-8 | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 7mOhm @ 15A, 10V | |
Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) | |
Package / Case | PowerPAK® SO-8 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 5170 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | |
Basis Produktnummer | SI7159 |
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Produktiounsattriff | ||||
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Part Number | SI7159DP-T1-GE3 | SI7156DP-T1-E3 | SI7155DP-T1-GE3 | SI7164DP-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 10V |
Package / Case | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
FET Typ | P-Channel | N-Channel | P-Channel | N-Channel |
Basis Produktnummer | SI7159 | SI7156 | SI7155 | SI7164 |
Vgs (th) (Max) @ Id | 2.5V @ 250µA | 3V @ 250µA | 2.3V @ 250µA | 4.5V @ 250µA |
Supplier Device Package | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 | PowerPAK® SO-8 |
Rds On (Max) @ Id, Vgs | 7mOhm @ 15A, 10V | 3.5mOhm @ 20A, 10V | 3.6mOhm @ 20A, 10V | 6.25mOhm @ 10A, 10V |
Power Dissipation (Max) | 5.4W (Ta), 83W (Tc) | 5.4W (Ta), 83W (Tc) | 6.25W (Ta), 104W (Tc) | 6.25W (Ta), 104W (Tc) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® Gen III | TrenchFET® |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Input Capacitance (Ciss) (Max) @ Vds | 5170 pF @ 15 V | 6900 pF @ 20 V | 12900 pF @ 20 V | 2830 pF @ 30 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 30A (Tc) | 50A (Tc) | 31A (Ta), 100A (Tc) | 60A (Tc) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Entworf fir Source Voltage (Vdss) | 30 V | 40 V | 40 V | 60 V |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V | 155 nC @ 10 V | 330 nC @ 10 V | 75 nC @ 10 V |
Vgs (Max) | ±25V | ±20V | ±20V | ±20V |
FET Feature | - | - | - | - |
Eroflueden SI7159DP-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7159DP-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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