SI7102DN-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI7102DN-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI7102DN-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | PowerPAK® 1212-8 | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 4.5V | |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) | |
| Package / Case | PowerPAK® 1212-8 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -50°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 6 V | |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 8 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) | |
| Basis Produktnummer | SI7102 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI7102DN-T1-GE3.
| Produktiounsattriff |  |
 |
|
|
|---|---|---|---|---|
| Part Number | SI7102DN-T1-GE3 | SI7104DN-T1-GE3 | SI7106DN-T1-GE3 | SI7101DN-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 8 V | 70 nC @ 10 V | 27 nC @ 4.5 V | 102 nC @ 10 V |
| Vgs (th) (Max) @ Id | 1V @ 250µA | 1.8V @ 250µA | 1.5V @ 250µA | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 15A, 4.5V | 3.7mOhm @ 26.1A, 4.5V | 6.2mOhm @ 19.5A, 4.5V | 7.2mOhm @ 15A, 10V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| FET Feature | - | - | - | - |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Package / Case | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Power Dissipation (Max) | 3.8W (Ta), 52W (Tc) | 3.8W (Ta), 52W (Tc) | 1.5W (Ta) | 3.7W (Ta), 52W (Tc) |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 35A (Tc) | 35A (Tc) | 12.5A (Ta) | 35A (Tc) |
| Basis Produktnummer | SI7102 | SI7104 | SI7106 | SI7101 |
| Supplier Device Package | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
| Vgs (Max) | ±8V | ±12V | ±12V | ±25V |
| Input Capacitance (Ciss) (Max) @ Vds | 3720 pF @ 6 V | 2800 pF @ 6 V | - | 3595 pF @ 15 V |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V | 4.5V, 10V |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
| Entworf fir Source Voltage (Vdss) | 12 V | 12 V | 20 V | 30 V |
| Operatioun Temperatur | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden SI7102DN-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI7102DN-T1-GE3 - Vishay Siliconix.
SI7104DN-T1-GE3Vishay SiliconixMOSFET N-CH 12V 35A PPAK 1212-8SI7106DN-T1-GE3Vishay SiliconixMOSFET N-CH 20V 12.5A PPAK1212-8
Si7106DN-T1-GE3 MOSElectro-Films (EFI) / VishaySI7100EDN-T1-GE3Electro-Films (EFI) / VishaySI7101DN-T1-GE3Vishay SiliconixMOSFET P-CH 30V 35A PPAK 1212-8SI7102DN-T1-GE3 MOSElectro-Films (EFI) / VishaySI7100DN-T1-GE3Vishay SiliconixMOSFET N-CH 8V 35A PPAK 1212-8SI7100DN-T1-E3Vishay SiliconixMOSFET N-CH 8V 35A PPAK1212-8SI7100DNSISI7102DN-T1-E3Vishay SiliconixMOSFET N-CH 12V 35A PPAK 1212-8SI7104DN-T1-E3Vishay SiliconixMOSFET N-CH 12V 35A PPAK 1212-8SI7106DN-T1-E3 MOSElectro-Films (EFI) / VishaySI7106DNSISI7100DN-T1-GE3 MOSElectro-Films (EFI) / VishaySI7100DN-T1-E3 MOSElectro-Films (EFI) / VishaySI7106JN-T1-GE3Electro-Films (EFI) / VishaySI7101DN-T1-GE3 MOSElectro-Films (EFI) / VishaySI7106DN-T1-E3Vishay SiliconixMOSFET N-CH 20V 12.5A PPAK1212-8| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.