SI6562CDQ-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI6562CDQ-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI6562CDQ-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-TSSOP | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5.7A, 4.5V | |
| Power - Max | 1.6W, 1.7W | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V | |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A, 6.1A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | SI6562 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI6562CDQ-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI6562CDQ-T1-GE3 | SI6544BDQ-T1-E3 | SI6544BDQ-T1-GE3 | SI6562DQ-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Entworf fir Source Voltage (Vdss) | 20V | 30V | 30V | 20V |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 5.7A, 4.5V | 43mOhm @ 3.8A, 10V | 43mOhm @ 3.8A, 10V | 30mOhm @ 4.5A, 4.5V |
| Vgs (th) (Max) @ Id | 1.5V @ 250µA | 3V @ 250µA | 3V @ 250µA | 600mV @ 250µA (Min) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Supplier Device Package | 8-TSSOP | 8-TSSOP | 8-TSSOP | 8-TSSOP |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Input Capacitance (Ciss) (Max) @ Vds | 850pF @ 10V | - | - | - |
| Basis Produktnummer | SI6562 | SI6544 | SI6544 | SI6562 |
| Power - Max | 1.6W, 1.7W | 830mW | 830mW | 1W |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 23nC @ 10V | 15nC @ 10V | 15nC @ 10V | 25nC @ 4.5V |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.7A, 6.1A | 3.7A, 3.8A | 3.7A, 3.8A | - |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
Eroflueden SI6562CDQ-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI6562CDQ-T1-GE3 - Vishay Siliconix.
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SI6801DQ-T1Silicon PowerSI6562DQ-T1-E3Vishay SiliconixMOSFET N/P-CH 20V 8-TSSOPSI6544BDQ-T1Electro-Films (EFI) / VishaySI6801DQ-T1-E3Electro-Films (EFI) / VishaySI6544DQ-T1-GE3VBSEMISI6544DQ-T1Electro-Films (EFI) / VishaySI6562CDQVishay| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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