SI6466ADQ-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI6466ADQ-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI6466ADQ-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 450mV @ 250µA (Min) | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-TSSOP | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 8.1A, 4.5V | |
| Power Dissipation (Max) | 1.05W (Ta) | |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 20 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Ta) | |
| Basis Produktnummer | SI6466 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI6466ADQ-T1-GE3.
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|---|---|---|---|---|
| Part Number | SI6466ADQ-T1-GE3 | SI6463BDQ-T1-E3 | SI6467BDQ-T1-E3 | SI6465DQ-T1-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 5 V | 60 nC @ 5 V | 70 nC @ 4.5 V | 80 nC @ 4.5 V |
| Vgs (Max) | ±8V | - | - | ±8V |
| Rds On (Max) @ Id, Vgs | 14mOhm @ 8.1A, 4.5V | 15mOhm @ 7.4A, 4.5V | 12.5mOhm @ 8A, 4.5V | 12mOhm @ 8.8A, 4.5V |
| Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 12 V | 8 V |
| Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
| Power Dissipation (Max) | 1.05W (Ta) | - | - | 1.5W (Ta) |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | - | - | 1.8V, 4.5V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Ta) | 6.2A (Ta) | 6.8A (Ta) | 8.8A (Ta) |
| Package protegéieren | Tape & Reel (TR) | Cut Tape (CT) | Cut Tape (CT) | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | - | - | -55°C ~ 150°C (TJ) |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 450mV @ 250µA (Min) | 800mV @ 250µA | 850mV @ 450µA | 450mV @ 250µA (Min) |
| Basis Produktnummer | SI6466 | SI6463 | SI6467 | SI6465 |
| Supplier Device Package | 8-TSSOP | 8-TSSOP | 8-TSSOP | 8-TSSOP |
Eroflueden SI6466ADQ-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI6466ADQ-T1-GE3 - Vishay Siliconix.
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SI6465DQSI| Allgemeng Länner Login logistesch Zäit Referenz | ||
|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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