SI6415DQ-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI6415DQ-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI6415DQ-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-TSSOP | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 19mOhm @ 6.5A, 10V | |
Power Dissipation (Max) | 1.5W (Ta) | |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | |
Basis Produktnummer | SI6415 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI6415DQ-T1-E3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI6415DQ-T1-E3 | SI6415DQ-T1-GE3 | SI6410DQ-T1-GE3 | SI6423ADQ-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Power Dissipation (Max) | 1.5W (Ta) | 1.5W (Ta) | 1.5W (Ta) | 1.5W (Ta), 2.2W (Tc) |
Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | 1V @ 250µA (Min) | 1V @ 250µA (Min) | 1V @ 250µA |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | 6.4A (Ta) | 7.8A (Ta) | 10.3A (Ta), 12.5A (Tc) |
FET Feature | - | - | - | - |
Gate Charge (Qg) (Max) @ Vgs | 70 nC @ 10 V | 70 nC @ 10 V | 33 nC @ 5 V | 168 nC @ 8 V |
Supplier Device Package | 8-TSSOP | 8-TSSOP | 8-TSSOP | 8-TSSOP |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 19mOhm @ 6.5A, 10V | 19mOhm @ 6.5A, 10V | 14mOhm @ 7.8A, 10V | 9.8mOhm @ 10A, 4.5V |
Basis Produktnummer | SI6415 | SI6415 | SI6410 | SI6423 |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
Vgs (Max) | ±20V | ±20V | ±20V | ±8V |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Package / Case | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP (0.173", 4.40mm Width) |
FET Typ | P-Channel | P-Channel | N-Channel | P-Channel |
Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | 20 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Eroflueden SI6415DQ-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI6415DQ-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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