SI5906DU-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI5906DU-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI5906DU-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | PowerPAK® ChipFet Dual | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 31mOhm @ 4.8A, 10V | |
Power - Max | 10.4W | |
Package / Case | PowerPAK® ChipFET™ Dual | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 10V | |
FET Feature | Logic Level Gate | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | SI5906 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI5906DU-T1-GE3.
Produktiounsattriff | ||||
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Part Number | SI5906DU-T1-GE3 | SI5908DC-T1-E3 | SI5903DC-T1-E3 | SI5904DC-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Supplier Device Package | PowerPAK® ChipFet Dual | 1206-8 ChipFET™ | 1206-8 ChipFET™ | 1206-8 ChipFET™ |
Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 15V | - | - | - |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6A | 4.4A | 2.1A | 3.1A |
FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Power - Max | 10.4W | 1.1W | 1.1W | 1.1W |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
Rds On (Max) @ Id, Vgs | 31mOhm @ 4.8A, 10V | 40mOhm @ 4.4A, 4.5V | 155mOhm @ 2.1A, 4.5V | 75mOhm @ 3.1A, 4.5V |
Vgs (th) (Max) @ Id | 2.2V @ 250µA | 1V @ 250µA | 600mV @ 250µA (Min) | 1.5V @ 250µA |
Basis Produktnummer | SI5906 | SI5908 | SI5903 | SI5904 |
Gate Charge (Qg) (Max) @ Vgs | 8.6nC @ 10V | 7.5nC @ 4.5V | 6nC @ 4.5V | 6nC @ 4.5V |
Entworf fir Source Voltage (Vdss) | 30V | 20V | 20V | 20V |
Package / Case | PowerPAK® ChipFET™ Dual | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Eroflueden SI5906DU-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI5906DU-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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