SI5447DC-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI5447DC-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI5447DC-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 450mV @ 250µA (Min) | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 1206-8 ChipFET™ | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 76mOhm @ 3.5A, 4.5V | |
Power Dissipation (Max) | 1.3W (Ta) | |
Package / Case | 8-SMD, Flat Lead | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | |
Basis Produktnummer | SI5447 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI5447DC-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI5447DC-T1-GE3 | SI5447DC-T1-E3 | SI5449DC-T1-E3 | SI5443DC-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Entworf fir Source Voltage (Vdss) | 20 V | 20 V | 30 V | 20 V |
Vgs (th) (Max) @ Id | 450mV @ 250µA (Min) | 450mV @ 250µA (Min) | 600mV @ 250µA (Min) | 600mV @ 250µA (Min) |
Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V | 10 nC @ 4.5 V | 11 nC @ 4.5 V | 14 nC @ 4.5 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
FET Feature | - | - | - | - |
Rds On (Max) @ Id, Vgs | 76mOhm @ 3.5A, 4.5V | 76mOhm @ 3.5A, 4.5V | 85mOhm @ 3.1A, 4.5V | 65mOhm @ 3.6A, 4.5V |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V | 2.5V, 4.5V |
Basis Produktnummer | SI5447 | SI5447 | SI5449 | SI5443 |
Supplier Device Package | 1206-8 ChipFET™ | 1206-8 ChipFET™ | 1206-8 ChipFET™ | 1206-8 ChipFET™ |
FET Typ | P-Channel | P-Channel | P-Channel | P-Channel |
Power Dissipation (Max) | 1.3W (Ta) | 1.3W (Ta) | 1.3W (Ta) | 1.3W (Ta) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Vgs (Max) | ±8V | ±8V | ±12V | ±12V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead | 8-SMD, Flat Lead |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 3.5A (Ta) | 3.5A (Ta) | 3.1A (Ta) | 3.6A (Ta) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Eroflueden SI5447DC-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI5447DC-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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