SI5406DC-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI5406DC-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI5406DC-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 600mV @ 1.2mA (Min) | |
| Vgs (Max) | ±8V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 1206-8 ChipFET™ | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.9A, 4.5V | |
| Power Dissipation (Max) | 1.3W (Ta) | |
| Package / Case | 8-SMD, Flat Lead | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
| Entworf fir Source Voltage (Vdss) | 12 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.9A (Ta) | |
| Basis Produktnummer | SI5406 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI5406DC-T1-E3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI5406DC-T1-E3 | SI5415EDU-T1-GE3 | SI5415AEDU-T1-GE3 | SI5404BDC-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Basis Produktnummer | SI5406 | SI5415 | SI5415 | SI5404 |
| Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 1.8V, 4.5V | 1.8V, 4.5V | 2.5V, 4.5V |
| Package / Case | 8-SMD, Flat Lead | PowerPAK® ChipFET™ Single | PowerPAK® ChipFET™ Single | 8-SMD, Flat Lead |
| FET Typ | N-Channel | P-Channel | P-Channel | N-Channel |
| Supplier Device Package | 1206-8 ChipFET™ | PowerPAK® ChipFet Single | PowerPAK® ChipFet Single | 1206-8 ChipFET™ |
| Vgs (Max) | ±8V | ±8V | ±8V | ±12V |
| Entworf fir Source Voltage (Vdss) | 12 V | 20 V | 20 V | 20 V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -50°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 6.9A, 4.5V | 9.8mOhm @ 10A, 4.5V | 9.6mOhm @ 10A, 4.5V | 28mOhm @ 5.4A, 4.5V |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Power Dissipation (Max) | 1.3W (Ta) | 3.1W (Ta), 31W (Tc) | 3.1W (Ta), 31W (Tc) | 1.3W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 4.5 V | 120 nC @ 8 V | 120 nC @ 8 V | 11 nC @ 4.5 V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.9A (Ta) | 25A (Tc) | 25A (Tc) | 5.4A (Ta) |
| FET Feature | - | - | - | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Vgs (th) (Max) @ Id | 600mV @ 1.2mA (Min) | 1V @ 250µA | 1V @ 250µA | 1.5V @ 250µA |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Eroflueden SI5406DC-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI5406DC-T1-E3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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