SI4972DY-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI4972DY-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4972DY-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 3V @ 250µA | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 14.5mOhm @ 6A, 10V | |
Power - Max | 3.1W, 2.5W | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V | |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V | |
FET Feature | - | |
Entworf fir Source Voltage (Vdss) | 30V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.8A, 7.2A | |
Konfiguratioun | 2 N-Channel (Dual) | |
Basis Produktnummer | SI4972 |
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Produktiounsattriff | ||||
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Part Number | SI4972DY-T1-E3 | SI4974DY-T1-E3 | SI4967DY-T1-E3 | SI4972DY-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Entworf fir Source Voltage (Vdss) | 30V | 30V | 12V | 30V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Input Capacitance (Ciss) (Max) @ Vds | 1080pF @ 15V | - | - | 1080pF @ 15V |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 10.8A, 7.2A | 6A, 4.4A | - | 10.8A, 7.2A |
FET Feature | - | Logic Level Gate | Logic Level Gate | - |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V | 11nC @ 4.5V | 55nC @ 10V | 28nC @ 10V |
Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 P-Channel (Dual) | 2 N-Channel (Dual) |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Basis Produktnummer | SI4972 | SI4974 | SI4967 | SI4972 |
Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 450mV @ 250µA (Min) | 3V @ 250µA |
Rds On (Max) @ Id, Vgs | 14.5mOhm @ 6A, 10V | 19mOhm @ 8A, 10V | 23mOhm @ 7.5A, 4.5V | 14.5mOhm @ 6A, 10V |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Power - Max | 3.1W, 2.5W | 1.1W | 2W | 3.1W, 2.5W |
Eroflueden SI4972DY-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4972DY-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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