SI4776DY-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI4776DY-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4776DY-T1-GE3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 2.3V @ 1mA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | SkyFET®, TrenchFET® | |
Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V | |
Power Dissipation (Max) | 4.1W (Tc) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TA) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 521 pF @ 15 V | |
Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
Entworf fir Source Voltage (Vdss) | 30 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.9A (Tc) | |
Basis Produktnummer | SI4776 |
ATTRESSIOUN | BESCHREIWUNG |
---|---|
RoHs Status | |
Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
Erreecht Status | |
ECCN | EAR99 |
HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI4776DY-T1-GE3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI4776DY-T1-GE3 | SI4778DY-T1-GE3 | SI4778DY-T1-E3 | SI4774DY-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Rds On (Max) @ Id, Vgs | 16mOhm @ 10A, 10V | 23mOhm @ 7A, 10V | 23mOhm @ 7A, 10V | 9.5mOhm @ 10A, 10V |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 11.9A (Tc) | 8A (Tc) | 8A (Tc) | 16A (Tc) |
Serie | SkyFET®, TrenchFET® | TrenchFET® | TrenchFET® | SkyFET®, TrenchFET® |
Vgs (Max) | ±20V | ±16V | ±16V | ±20V |
Operatioun Temperatur | -55°C ~ 150°C (TA) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TA) |
Vgs (th) (Max) @ Id | 2.3V @ 1mA | 2.2V @ 250µA | 2.2V @ 250µA | 2.3V @ 1mA |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
FET Feature | - | - | - | Schottky Diode (Body) |
Basis Produktnummer | SI4776 | SI4778 | SI4778 | SI4774 |
Power Dissipation (Max) | 4.1W (Tc) | 2.4W (Ta), 5W (Tc) | 2.4W (Ta), 5W (Tc) | 5W (Tc) |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Input Capacitance (Ciss) (Max) @ Vds | 521 pF @ 15 V | 680 pF @ 13 V | 680 pF @ 13 V | 1025 pF @ 15 V |
Entworf fir Source Voltage (Vdss) | 30 V | 25 V | 25 V | 30 V |
Gate Charge (Qg) (Max) @ Vgs | 17.5 nC @ 10 V | 18 nC @ 10 V | 18 nC @ 10 V | 14.3 nC @ 4.5 V |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
FET Typ | N-Channel | N-Channel | N-Channel | N-Channel |
Eroflueden SI4776DY-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4776DY-T1-GE3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? ARA AAA A WED : Mir kontaktéieren Iech direkt.