SI4688DY-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI4688DY-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4688DY-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 3V @ 250µA | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V | |
| Power Dissipation (Max) | 1.4W (Ta) | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1580 pF @ 15 V | |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | |
| FET Typ | N-Channel | |
| FET Feature | - | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.9A (Ta) | |
| Basis Produktnummer | SI4688 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI4688DY-T1-GE3.
| Produktiounsattriff |  |
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|
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|---|---|---|---|---|
| Part Number | SI4688DY-T1-GE3 | SI4686DY-T1-E3 | SI4686DY-T1-GE3 | SI4688-A10-GM |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Skyworks Solutions Inc. |
| Input Capacitance (Ciss) (Max) @ Vds | 1580 pF @ 15 V | 1220 pF @ 15 V | 1220 pF @ 15 V | - |
| Basis Produktnummer | SI4688 | SI4686 | SI4686 | SI4688 |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -40°C ~ 85°C |
| Vgs (th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA | 3V @ 250µA | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tray |
| Vgs (Max) | ±20V | ±20V | ±20V | - |
| Rds On (Max) @ Id, Vgs | 11mOhm @ 12A, 10V | 9.5mOhm @ 13.8A, 10V | 9.5mOhm @ 13.8A, 10V | - |
| Power Dissipation (Max) | 1.4W (Ta) | 3W (Ta), 5.2W (Tc) | 3W (Ta), 5.2W (Tc) | - |
| Serie | TrenchFET® | TrenchFET® | TrenchFET®, WFET® | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | - |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V | 26 nC @ 10 V | 26 nC @ 10 V | - |
| FET Feature | - | - | - | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 30 V | 30 V | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 48-VFQFN Exposed Pad |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8.9A (Ta) | 18.2A (Tc) | 18.2A (Tc) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 48-QFN (7x7) |
| FET Typ | N-Channel | N-Channel | N-Channel | - |
Eroflueden SI4688DY-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4688DY-T1-GE3 - Vishay Siliconix.
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