SI4618DY-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI4618DY-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4618DY-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8A, 10V | |
| Power - Max | 1.98W, 4.16W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 1535pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V | |
| FET Feature | - | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A, 15.2A | |
| Konfiguratioun | 2 N-Channel (Half Bridge) | |
| Basis Produktnummer | SI4618 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI4618DY-T1-E3.
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|---|---|---|---|---|
| Part Number | SI4618DY-T1-E3 | SI4590DY-T1-GE3 | SI4599DY-T1-GE3 | SI4622DY-T1-E3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Basis Produktnummer | SI4618 | SI4590 | SI4599 | SI4622 |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | SkyFET®, TrenchFET® |
| Power - Max | 1.98W, 4.16W | 2.4W, 3.4W | 3W, 3.1W | 3.3W, 3.1W |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Input Capacitance (Ciss) (Max) @ Vds | 1535pF @ 15V | 360pF @ 50V | 640pF @ 20V | 2458pF @ 15V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 8A, 10V | 57mOhm @ 2A, 10V | 35.5mOhm @ 5A, 10V | 16mOhm @ 9.6A, 10V |
| Vgs (th) (Max) @ Id | 2.5V @ 1mA | 2.5V @ 250µA | 3V @ 250µA | 2.5V @ 1mA |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V | 11.5nC @ 10V | 20nC @ 10V | 60nC @ 10V |
| Technologie | MOSFET (Metal Oxide) | - | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Entworf fir Source Voltage (Vdss) | 30V | 100V | 40V | 30V |
| FET Feature | - | - | Logic Level Gate | - |
| Konfiguratioun | 2 N-Channel (Half Bridge) | N and P-Channel | N and P-Channel | 2 N-Channel (Dual) |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 8A, 15.2A | 3.4A, 2.8A | 6.8A, 5.8A | 8A |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden SI4618DY-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4618DY-T1-E3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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