SI4426DY-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI4426DY-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4426DY-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1.4V @ 250µA | |
Vgs (Max) | ±12V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 25mOhm @ 8.5A, 4.5V | |
Power Dissipation (Max) | 1.5W (Ta) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 20 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | |
Basis Produktnummer | SI4426 |
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Produktiounsattriff | ||||
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Part Number | SI4426DY-T1-E3 | SI4425FDY-T1-GE3 | SI4425DDY-T1-GE3 | SI4427BDY-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A (Ta) | 12.7A (Ta), 18.3A (Tc) | 19.7A (Tc) | 9.7A (Ta) |
Power Dissipation (Max) | 1.5W (Ta) | 2.3W (Ta), 4.8W (Tc) | 2.5W (Ta), 5.7W (Tc) | 1.5W (Ta) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Fuert Volt (Max Rds On, Min Rds On) | 2.5V, 4.5V | 4.5V, 10V | 4.5V, 10V | 2.5V, 10V |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
FET Typ | N-Channel | P-Channel | P-Channel | P-Channel |
Rds On (Max) @ Id, Vgs | 25mOhm @ 8.5A, 4.5V | 9.5mOhm @ 10A, 10V | 9.8mOhm @ 13A, 10V | 10.5mOhm @ 12.6A, 10V |
Basis Produktnummer | SI4426 | SI4425 | SI4425 | SI4427 |
Gate Charge (Qg) (Max) @ Vgs | 50 nC @ 4.5 V | 41 nC @ 10 V | 80 nC @ 10 V | 70 nC @ 4.5 V |
FET Feature | - | - | - | - |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Serie | TrenchFET® | TrenchFET® Gen IV | TrenchFET® | TrenchFET® |
Vgs (th) (Max) @ Id | 1.4V @ 250µA | 2.2V @ 250µA | 2.5V @ 250µA | 1.4V @ 250µA |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 20 V | 30 V | 30 V | 30 V |
Vgs (Max) | ±12V | +16V, -20V | ±20V | ±12V |
Eroflueden SI4426DY-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4426DY-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
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Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
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Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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