SI4210DY-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI4210DY-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4210DY-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 8-SOIC | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 5A, 10V | |
| Power - Max | 2.7W | |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | 445pF @ 15V | |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A | |
| Konfiguratioun | 2 N-Channel (Dual) | |
| Basis Produktnummer | SI4210 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI4210DY-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI4210DY-T1-GE3 | SI4214DDY-T1-GE3 | SI4214DDY-T1-E3 | SI4214DDY-TI |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Electro-Films (EFI) / Vishay |
| Konfiguratioun | 2 N-Channel (Dual) | 2 N-Channel (Dual) | 2 N-Channel (Dual) | - |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | - |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 10V | 22nC @ 10V | 22nC @ 10V | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | - |
| Basis Produktnummer | SI4210 | SI4214 | SI4214 | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Rds On (Max) @ Id, Vgs | 35.5mOhm @ 5A, 10V | 19.5mOhm @ 8A, 10V | 19.5mOhm @ 8A, 10V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 445pF @ 15V | 660pF @ 15V | 660pF @ 15V | - |
| Vgs (th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | - |
| Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | - |
| Power - Max | 2.7W | 3.1W | 3.1W | - |
| Entworf fir Source Voltage (Vdss) | 30V | 30V | 30V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.5A | 8.5A | 8.5A | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Eroflueden SI4210DY-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4210DY-T1-GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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