SI4100DY-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI4100DY-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI4100DY-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | |
Vgs (Max) | ±20V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 8-SOIC | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 63mOhm @ 4.4A, 10V | |
Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) | |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 50 V | |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | |
FET Typ | N-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | |
Entworf fir Source Voltage (Vdss) | 100 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Tc) | |
Basis Produktnummer | SI4100 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI4100DY-T1-E3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI4100DY-T1-E3 | SI4090DY-T1-GE3 | SI4102DY-T1-GE3 | SI4101DY-T1-GE3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Entworf fir Source Voltage (Vdss) | 100 V | 100 V | 100 V | 30 V |
Vgs (th) (Max) @ Id | 4.5V @ 250µA | 3.3V @ 250µA | 4V @ 250µA | 2.5V @ 250µA |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V | 69 nC @ 10 V | 11 nC @ 10 V | 203 nC @ 10 V |
FET Feature | - | - | - | - |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 63mOhm @ 4.4A, 10V | 10mOhm @ 15A, 10V | 158mOhm @ 2.7A, 10V | 6mOhm @ 15A, 10V |
Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 50 V | 2410 pF @ 50 V | 370 pF @ 50 V | 8190 pF @ 15 V |
Basis Produktnummer | SI4100 | SI4090 | SI4102 | SI4101 |
Power Dissipation (Max) | 2.5W (Ta), 6W (Tc) | 3.5W (Ta), 7.8W (Tc) | 2.4W (Ta), 4.8W (Tc) | 6W (Tc) |
FET Typ | N-Channel | N-Channel | N-Channel | P-Channel |
Fuert Volt (Max Rds On, Min Rds On) | 6V, 10V | 6V, 10V | 6V, 10V | 4.5V, 10V |
Vgs (Max) | ±20V | ±20V | ±20V | ±20V |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 6.8A (Tc) | 19.7A (Tc) | 3.8A (Tc) | 25.7A (Tc) |
Supplier Device Package | 8-SOIC | 8-SOIC | 8-SOIC | 8-SOIC |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Eroflueden SI4100DY-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI4100DY-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.