SI3851DV-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI3851DV-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI3851DV-T1-E3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | |
| Vgs (Max) | ±20V | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSOP | |
| Serie | LITTLE FOOT® | |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.8A, 10V | |
| Power Dissipation (Max) | 830mW (Ta) | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 5 V | |
| FET Typ | P-Channel | |
| FET Feature | Schottky Diode (Isolated) | |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | |
| Entworf fir Source Voltage (Vdss) | 30 V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | |
| Basis Produktnummer | SI3851 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI3851DV-T1-E3.
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|---|---|---|---|---|
| Part Number | SI3851DV-T1-E3 | SI3853DV-T1-E3 | SI3812DV-T1-GE3 | SI3851DV-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Electro-Films (EFI) / Vishay |
| FET Feature | Schottky Diode (Isolated) | Schottky Diode (Isolated) | Schottky Diode (Isolated) | - |
| Entworf fir Source Voltage (Vdss) | 30 V | 20 V | 20 V | - |
| Power Dissipation (Max) | 830mW (Ta) | 830mW (Ta) | 830mW (Ta) | - |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | - |
| Basis Produktnummer | SI3851 | SI3853 | SI3812 | - |
| Fuert Volt (Max Rds On, Min Rds On) | 4.5V, 10V | 2.5V, 4.5V | 2.5V, 4.5V | - |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Gate Charge (Qg) (Max) @ Vgs | 3.6 nC @ 5 V | 4 nC @ 4.5 V | 4 nC @ 4.5 V | - |
| Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | - |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | - |
| Serie | LITTLE FOOT® | LITTLE FOOT® | LITTLE FOOT® | - |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 1.8A, 10V | 200mOhm @ 1.8A, 4.5V | 125mOhm @ 2.4A, 4.5V | - |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 1.6A (Ta) | 1.6A (Ta) | 2A (Ta) | - |
| Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | 500mV @ 250µA (Min) | 600mV @ 250µA (Min) | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | - |
| Vgs (Max) | ±20V | ±12V | ±12V | - |
| FET Typ | P-Channel | P-Channel | N-Channel | - |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | - |
Eroflueden SI3851DV-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI3851DV-T1-E3 - Vishay Siliconix.
SI3851DV-T1-GE3Electro-Films (EFI) / VishaySI3851DVElectro-Films (EFI) / VishaySI3812DV-T1Electro-Films (EFI) / VishaySI3861BDV-T1-E3Vishay SiliconixIC PWR SWITCH P-CHAN 1:1 6TSOPSI3861DV-T1Electro-Films (EFI) / VishaySI3861BDV-T1-GE3Vishay SiliconixIC PWR SWITCH P-CHAN 1:1 6TSOP
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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