SI3586DV-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI3586DV-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI3586DV-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1.1V @ 250µA | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSOP | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.4A, 4.5V | |
| Power - Max | 830mW | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 20V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A, 2.1A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | SI3586 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI3586DV-T1-GE3.
| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI3586DV-T1-GE3 | SI3588DV-T1-GE3 | SI3585DV-T1-GE3 | SI3585CDV-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.9A, 2.1A | 2.5A, 570mA | 2A, 1.5A | 3.9A, 2.1A |
| Power - Max | 830mW | 830mW, 83mW | 830mW | 1.4W, 1.3W |
| Entworf fir Source Voltage (Vdss) | 20V | 20V | 20V | 20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V | 7.5nC @ 4.5V | 3.2nC @ 4.5V | 4.8nC @ 10V |
| Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | 6-TSOP |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Basis Produktnummer | SI3586 | SI3588 | SI3585 | SI3585 |
| Vgs (th) (Max) @ Id | 1.1V @ 250µA | 450mV @ 250µA (Min) | 600mV @ 250µA (Min) | 1.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | - | 150pF @ 10V |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 3.4A, 4.5V | 80mOhm @ 3A, 4.5V | 125mOhm @ 2.4A, 4.5V | 58mOhm @ 2.5A, 4.5V |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
Eroflueden SI3586DV-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI3586DV-T1-GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
| Neiséiland | 5- | |
| Asien | Indien | 4 |
| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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