SI3552DV-T1-GE3 Tech Spezifikatioune
Vishay Siliconix - SI3552DV-T1-GE3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI3552DV-T1-GE3
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Hiersteller | Vishay / Siliconix | |
| Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | |
| Technologie | MOSFET (Metal Oxide) | |
| Supplier Device Package | 6-TSOP | |
| Serie | TrenchFET® | |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.5A, 10V | |
| Power - Max | 1.15W | |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
| Package protegéieren | Tape & Reel (TR) |
| Produktiounsattriff | Attributer Wäert | |
|---|---|---|
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
| Mounting Type | Surface Mount | |
| Input Capacitance (Ciss) (Max) @ Vds | - | |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V | |
| FET Feature | Logic Level Gate | |
| Entworf fir Source Voltage (Vdss) | 30V | |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A | |
| Konfiguratioun | N and P-Channel | |
| Basis Produktnummer | SI3552 |
| ATTRESSIOUN | BESCHREIWUNG |
|---|---|
| RoHs Status | |
| Fiichtegkeet Sensibilitéitsniveau (MSL) | 1 (Unlimited) |
| Erreecht Status | |
| ECCN | EAR99 |
| HTSUS |
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| Produktiounsattriff |  |
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|---|---|---|---|---|
| Part Number | SI3552DV-T1-GE3 | SI3585DV-T1-E3 | SI3552DV-T1-E3 | SI3585CDV-T1-GE3 |
| Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 5V | 3.2nC @ 4.5V | 3.2nC @ 5V | 4.8nC @ 10V |
| Basis Produktnummer | SI3552 | SI3585 | SI3552 | SI3585 |
| Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
| Entworf fir Source Voltage (Vdss) | 30V | 20V | 30V | 20V |
| Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Input Capacitance (Ciss) (Max) @ Vds | - | - | - | 150pF @ 10V |
| Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 2.5A | 2A, 1.5A | 2.5A | 3.9A, 2.1A |
| Konfiguratioun | N and P-Channel | N and P-Channel | N and P-Channel | N and P-Channel |
| Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
| Vgs (th) (Max) @ Id | 1V @ 250µA (Min) | 600mV @ 250µA (Min) | 1V @ 250µA (Min) | 1.5V @ 250µA |
| Power - Max | 1.15W | 830mW | 1.15W | 1.4W, 1.3W |
| FET Feature | Logic Level Gate | Logic Level Gate | Logic Level Gate | Logic Level Gate |
| Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | 6-TSOP |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 2.5A, 10V | 125mOhm @ 2.4A, 4.5V | 105mOhm @ 2.5A, 10V | 58mOhm @ 2.5A, 4.5V |
| Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Eroflueden SI3552DV-T1-GE3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI3552DV-T1-GE3 - Vishay Siliconix.
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|---|---|---|
| Regioun | Landunance | Logistesch Zäit (Dag) |
| Amerika | Vereenegt Staaten | 5- |
| Brasilien | 7 | |
| Europa | Däitschland | 5- |
| Vereenegt Kinnekräich | 4 | |
| Italien | 5- | |
| Oceania | Australien | 6 |
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| Japan | 4 | |
| Mettleren Osten | Israel | 6 |
| DHL & FEDEX Sendung Käschten Referenz | |
|---|---|
| Liwwerung Käschten (kg) | Referenz DHL (USD $) |
| 0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
| 1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
| 2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
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