SI3473DV-T1-E3 Tech Spezifikatioune
Vishay Siliconix - SI3473DV-T1-E3 technesch Spezifikatioune, Attributer, Parameteren an Deeler mat ähnleche Spezifikatioune zu Vishay Siliconix - SI3473DV-T1-E3
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Hiersteller | Vishay / Siliconix | |
Vgs (th) (Max) @ Id | 1V @ 250µA | |
Vgs (Max) | ±8V | |
Technologie | MOSFET (Metal Oxide) | |
Supplier Device Package | 6-TSOP | |
Serie | TrenchFET® | |
Rds On (Max) @ Id, Vgs | 23mOhm @ 7.9A, 4.5V | |
Power Dissipation (Max) | 1.1W (Ta) | |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | |
Package protegéieren | Tape & Reel (TR) |
Produktiounsattriff | Attributer Wäert | |
---|---|---|
Operatioun Temperatur | -55°C ~ 150°C (TJ) | |
Mounting Type | Surface Mount | |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V | |
FET Typ | P-Channel | |
FET Feature | - | |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | |
Entworf fir Source Voltage (Vdss) | 12 V | |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.9A (Ta) | |
Basis Produktnummer | SI3473 |
Déi dräi Deeler op der richteger hunn ähnlech Spezifikatioune zu Vishay Siliconix SI3473DV-T1-E3.
Produktiounsattriff | ||||
---|---|---|---|---|
Part Number | SI3473DV-T1-E3 | SI3474DV-T1-GE3 | SI3473CDV-T1-E3 | SI3475DV-T1-E3 |
Hiersteller | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
Package protegéieren | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) |
Power Dissipation (Max) | 1.1W (Ta) | 3.6W (Tc) | 4.2W (Tc) | 2W (Ta), 3.2W (Tc) |
FET Typ | P-Channel | N-Channel | P-Channel | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V | 10.4 nC @ 10 V | 65 nC @ 8 V | 18 nC @ 10 V |
Rds On (Max) @ Id, Vgs | 23mOhm @ 7.9A, 4.5V | 126mOhm @ 2A, 10V | 22mOhm @ 8.1A, 4.5V | 1.61Ohm @ 900mA, 10V |
Vgs (th) (Max) @ Id | 1V @ 250µA | 3V @ 250µA | 1V @ 250µA | 4V @ 250µA |
Technologie | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
Fuert Volt (Max Rds On, Min Rds On) | 1.8V, 4.5V | 4.5V, 10V | 1.8V, 4.5V | 6V, 10V |
FET Feature | - | - | - | - |
Package / Case | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
Basis Produktnummer | SI3473 | SI3474 | SI3473 | SI3475 |
Vgs (Max) | ±8V | ±20V | ±8V | ±20V |
Entworf fir Source Voltage (Vdss) | 12 V | 100 V | 12 V | 200 V |
Operatioun Temperatur | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Aktuell - Kontinuéierter Drain (Id) @ 25 ° C | 5.9A (Ta) | 3.8A (Tc) | 8A (Tc) | 950mA (Tc) |
Serie | TrenchFET® | TrenchFET® | TrenchFET® | TrenchFET® |
Supplier Device Package | 6-TSOP | 6-TSOP | 6-TSOP | 6-TSOP |
Eroflueden SI3473DV-T1-E3 PDF DataDhusts an Vishay Siliconix Dokumentatioun fir SI3473DV-T1-E3 - Vishay Siliconix.
Allgemeng Länner Login logistesch Zäit Referenz | ||
---|---|---|
Regioun | Landunance | Logistesch Zäit (Dag) |
Amerika | Vereenegt Staaten | 5- |
Brasilien | 7 | |
Europa | Däitschland | 5- |
Vereenegt Kinnekräich | 4 | |
Italien | 5- | |
Oceania | Australien | 6 |
Neiséiland | 5- | |
Asien | Indien | 4 |
Japan | 4 | |
Mettleren Osten | Israel | 6 |
DHL & FEDEX Sendung Käschten Referenz | |
---|---|
Liwwerung Käschten (kg) | Referenz DHL (USD $) |
0.00kg-1,00 kg | USD $ 30,00 - USD $ 60,00 |
1.00kg-2.00 kg | USD $ 40,00 - USD $ 80,00 |
2.00kg-3.00 kg | USD $ 50,00 - USD $ 100,00 |
Wëllt Dir e bessere Präis? A WED AN AMFE NEW, MELLT DIR DIR NËMMEN.